Hybrid offset compensated latch-type sense amplifier for tri-gated FinFET technology

Integration ◽  
2018 ◽  
Vol 62 ◽  
pp. 258-269 ◽  
Author(s):  
Mitesh Limachia ◽  
Dixit Vyas ◽  
Rajesh Thakker ◽  
Nikhil Kothari
Keyword(s):  
Sense Amplifier

Small-Sized Leakage-Controlled Gated Sense Amplifier for 0.5-V Multi-Gigabit DRAM Arrays

2012 ◽  
Vol E95-C (4) ◽  
pp. 594-599
Author(s):  
Akira KOTABE ◽  
Riichiro TAKEMURA ◽  
Yoshimitsu YANAGAWA ◽  
Tomonori SEKIGUCHI ◽  
Kiyoo ITOH
Keyword(s):  
Sense Amplifier

A Precision Current Sense Amplifier With Disable Function

2020 ◽  
Author(s):  
Vlad Moise ◽  
Razvan Puscasu ◽  
Gheorghe Brezeanu
Keyword(s):  
Sense Amplifier

A high-performance very low-voltage current sense amplifier for nonvolatile memories

2005 ◽  
Vol 40 (2) ◽  
pp. 507-514 ◽  
Author(s):  
A. Conte ◽  
G.L. Giudice ◽  
G. Palumbo ◽  
A. Signorello
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Sense Amplifier ◽  
Nonvolatile Memories

An Offset Reduction Technique for Latch Type Sense Amplifier in High Performance and High Density SRAM

2012 ◽  
Vol 542-543 ◽  
pp. 769-774
Author(s):  
Qun Ling Yu ◽  
Na Bai ◽  
Yan Zhou ◽  
Rui Xing Li ◽  
Jun Ning Chen ◽  
...  
Keyword(s):  
High Performance ◽  
Circuit Simulation ◽  
Cmos Technology ◽  
Optimal Operation ◽  
Reduction Technique ◽  
Total Speed ◽  
Sense Amplifier ◽  
Simulation Results ◽  
A New Technique ◽  
Total Energy Dissipation

A new technique for reducing the offset of latch-type sense amplifier has been proposed and effect of enable signal voltage upon latch-type sense amplifier offset in SRAM has been investigated in this paper. Circuit simulation results on both StrongARM and Double-tail topologies show that the standard deviation of offset can be reduced by 31.23% (StrongARM SA) and 25.2% (Double-tail SA) , respectively, when the voltage of enable signal reaches 0.6V in TSMC 65nm CMOS technology. For a column of bit-cell (1024 bit-cell), the total speed is improved by 14.98% (StrongARAM SA) and 22.26% (Double-tail SA) at the optimal operation point separately, and the total energy dissipation is reduced by 30.45% and 29.47% with this scheme.

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