Comparative studies on BaZrxTi1-xO3 thin films deposited by Sol-gel and Pulse laser deposition

2003 ◽  
Vol 784 ◽  
Author(s):  
A. Dixit ◽  
P. Bhattacharaya ◽  
S. B. Majumder ◽  
R. S. Katiyar ◽  
A. S. Bhalla
Keyword(s):  
Thin Films ◽  
Pulse Laser Deposition ◽  
Pulse Laser ◽  
Sol Gel ◽  
Laser Deposition ◽  
Pulse Laser Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Capacitance Voltage

ABSTRACTFerroelectric thin films of BaZrxTi1-xO3 (BZT) were deposited on platinum (Pt) and platinized silicon (Pt/Si) substrates by sol-gel and pulse laser deposition technique respectively. The structure and preferred orientation of the films were examined by x-ray diffraction measurements. The phase formation of sol-gel derived BZT films were found to be at high temperature (1100°C) compare to the pulse laser deposited BZT films ∼ 700°C. Polycrystalline films were observed by both techniques. Ferroelectric nature of the films was confirmed by hysteresis and capacitance-voltage characteristics using platinum top electrodes. Dielectric constant as well as loss was found to decrease by increasing Zr contents. Surface morphology predicted smooth crack free surface.

Preparation and Electrical Properties of (100) Preferred (Ba,Sr)TiO3 Bilayer Thin Films Derived from Pulse Laser Deposition Method

2007 ◽  
Vol 280-283 ◽  
pp. 849-852
Author(s):  
Sheng Guo Lu ◽  
Philip A. Friddle ◽  
Z.K. Xu ◽  
G.G. Siu ◽  
Haydn Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulse Laser Deposition ◽  
Leakage Current ◽  
Pulse Laser ◽  
Laser Deposition ◽  
Pulse Laser Deposition Method ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
Si Substrates

Bilayer Ba0.6Sr0.4TiO3 - Ba0.4Sr0.6TiO3 and Ba0.4Sr0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO2/Si substrates using pulse laser deposition method. A (100)preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave dielectrics.

In situ X-ray Studies of (La,Sr)MnO3_δ, (La,Sr)CoO3_δ, and La0.6Sr0.4Co0.2Fe0.8O3-δ Thin Film SOFC Cathodes Grown by Pulse Laser Deposition

2013 ◽  
Vol 1495 ◽  
Author(s):  
Kee-Chul Chang ◽  
Brian Ingram ◽  
Paul Salvador ◽  
Bilge Yildiz ◽  
Hoydoo You
Keyword(s):  
Thin Film ◽  
Solid Oxide Fuel Cells ◽  
Pulse Laser Deposition ◽  
Pulse Laser ◽  
Solid Oxide ◽  
Laser Deposition ◽  
Pulse Laser Deposition Technique ◽  
Oxide Fuel ◽  
X Ray

ABSTRACTWe will briefly review in situ synchrotron x-ray investigation of model thin film cathode systems for solid oxide fuel cells. The film cathodes examined in this study are (La,Sr)MnO3_δ (LSM), (La,Sr)CoO3_δ (LSC), and La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) thin films epitaxially grown on YSZ single crystal substrates by the pulse laser deposition technique. We find in all cases that Sr is enriched or segregated to the surface of the film cathodes. We concluded that the Sr enrichments or segregations are mainly the results of annealing because they do not depend on whether the cathodes are electrochemically biased or not during annealing. However, at least in the case of LSCF, we find that B-site Co segregates rather uniformly to the surface and the segregation responds sensitively and reversibly to the electrochemical bias.

Structural, Magnetic, and Electrical Properties of BiFe1-xMnxO3 Thin Films

2009 ◽  
Vol 1199 ◽  
Author(s):  
Danilo G Barrionuevo ◽  
Surinder P Singh ◽  
Maharaj S. Tomar
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Magnetic Measurements ◽  
Sol Gel ◽  
Ion Concentration ◽  
Ferromagnetic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Sol Gel Process

AbstractWe synthesized BiFe1-xMnxO3 (BFMO) for various compositions by sol gel process and thin films were deposited by spin coating on platinum Pt/Ti/SiO2/Si substrates. X-ray diffraction shows all the diffraction planes corresponding to rhombohedrally distorted perovskite BiFeO3 structure. The absence of any impurity phase in the films suggests the incorporation Mn ion preferentially to Fe site in the structure for low concentration. Magnetic measurements reveal the formation of ferromagnetic phase at room temperature with increased Mn substitution. On the other hand, ferroelectric polarization decreases with increasing Mn ion concentration. Raman studies suggest the dopant induced structural distortion.

ZrC Thin Films Grown by Pulsed Laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Crystalline Films

AbstractZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique. X- ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, and four point probe measurements were used to investigate the composition, density, thickness, surface morphology, optical and electrical properties of the grown structures. It has been found that crystalline films could be grown only by using fluences above 6 J/cm2 and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm2 and a substrate temperature of 700 °C, highly (100)-textured ZrC films exhibiting a cubic structure (a=0.469 nm) and a density of 6.7 g/cm3 were deposited. The use of a low-pressure atmosphere of C2H2 had a beneficial effect on crystallinity and stoichiometry of the films. All films contained high levels of oxygen contamination, especially in the surface region, because of the rather reactive nature of Zr atoms.

Photoswitching Characteristics of LiNbO3/ZnO/n-Si Heterojunction

2015 ◽  
Vol 655 ◽  
pp. 186-190
Author(s):  
Yun Jie Liu ◽  
Lan Zhong Hao ◽  
Jun Zhu ◽  
Wan Li Zhang ◽  
Lian Qing Yu ◽  
...  
Keyword(s):  
Pulse Laser Deposition ◽  
Pulse Laser ◽  
White Light ◽  
High Performance ◽  
Laser Deposition ◽  
Pulse Laser Deposition Technique ◽  
Deposition Technique ◽  
Ferroelectric Films ◽  
Si Substrates

(001)-oriented LiNbO3(LN) ferroelectric films were grown on (100)-oriented n-type Si substrates using 15 nm-thick ZnO layers as buffers by pulse laser deposition technique and the LN/ZnO/n-Si heterojunctions were fabricated. Obvious photoswitching characteristics to white light were observed when the reverse voltages were applied on the LN/ZnO/n-Si heterojunction. High performance was exhibited, such as a largeON/OFFratio, short photoresponse time, steadyONorOFFstates, and well reversible. The results were discussed in terms of the band diagrams of the LN/ZnO/Si heterojunctions in this work.

Structural and dielectric proper ties of CaCu3Ti4O12 thin film. deposited using laser ablation.

2003 ◽  
Vol 785 ◽  
Author(s):  
V. Gupta ◽  
R.R. Das ◽  
A. Dixit ◽  
P. Bhattacharya ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Vibrational Modes ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
X Ray ◽  
Si Substrates ◽  
Micro Raman Spectroscopy

ABSTRACTCaCu3Ti4O12 (CCT) thin films were deposited on Pt/TiO2/SiO2/Si substrates using pulsed laser deposition technique. During the thin films deposition, the substrate temperature was varied in the range of 700–800 °C with a constant O2 pressure of 200 mTorr. X-ray diffraction showed the polycrystalline nature of the films. The dielectric properties of the films were studied in metal insulator configuration. Films grown at higher substrate temperature exhibited highest value of dielectric permittivity (∼2200). Micro Raman spectroscopy was used to study the vibrational modes of the CCT thin films in comparison with the bulk ceramics.

Dielectric Tunability Properties and Thermal Stability of (Ba,Sr,Ca)TiO3 Thin Films Prepared by the Sol-Gel Method

2006 ◽  
Vol 966 ◽  
Author(s):  
Wei Qin ◽  
Wanhai Chen ◽  
Wenbiao Wu ◽  
Jinrong Cheng ◽  
Zhongyan Meng
Keyword(s):  
Thin Films ◽  
Ternary Phase ◽  
Ternary Phase Diagram ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
New Family ◽  
Capacitance Voltage ◽  
Curie Temperature Tc ◽  
Thermal Stability Of

ABSTRACTA new family of (Ba1-x-ySrxCay)TiO3 (BSCT) thin films was prepared on Pt(111)/TiO2/SiO2/Si substrates by using sol-gel techniques. BSCT thin films with Ba/Sr/Ca ratio of 15/55/30, 20/45/35 and 25/35/40 were investigated, which were selected at the cubic region in the vicinity of the cubic-tetragonal phase boundary according to the ternary phase diagram of BaTiO3-SrTiO3-CaTiO3. X-ray diffraction analysis indicates that BSCT thin films are of the cubic perovskite structure. No hysteresis window can be observed from the capacitance-voltage curves, reflecting that BSCT thin films are in the paraelectric phase. The dielectric constant and tunability of BSCT thin films were investigated in the temperature range of 200–370 K. The Curie temperature Tc increases with increasing Ba concentration.

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