Interfacial fracture toughness measurement for thin film interfaces

2004 ◽  
Vol 71 (9-10) ◽  
pp. 1219-1234 ◽  
Author(s):  
Mitul B. Modi ◽  
Suresh K. Sitaraman
2007 ◽  
Vol 345-346 ◽  
pp. 801-804
Author(s):  
Soo Hyun Lee ◽  
Jink Wang Kim ◽  
Su Nam Kim ◽  
Sang Bong Cho ◽  
Jon Do Yun

Indentation method was used to determine the interfacial fracture toughness of epoxy coating on aluminum substrate. Tensile testing followed by finite element analysis was also performed to determine the interface fracture toughness. Fracture toughness values determined by two methods were consistent, giving reliability to indentation method for interfacial fracture toughness measurement.


2004 ◽  
Vol 126 (3) ◽  
pp. 301-307 ◽  
Author(s):  
Mitul Modi ◽  
Suresh K. Sitaraman

Titanium adhesive layers are commonly used in microelectronic and MEMS applications to help improve the adhesion of other metal layers to a silicon substrate. Such Ti/Si interfaces could potentially delaminate under externally applied mechanical loads, thermally induced stresses, or process-induced intrinsic stresses or a combination of these different loads. In order to design against delamination, knowledge of the interfacial fracture toughness of the Ti/Si interface is necessary. However, interfacial fracture toughness data for such interfaces is not widely available in the open literature, in part due to the difficulty in measuring the strength of thin film interfaces. The Modified Decohesion Test (MDT), a new test developed by the authors, has been used to characterize the mode mix dependent interfacial fracture toughness of a Ti/Si interface. In this approach, a highly stressed super layer is used to drive delamination and generate any mode mix at the crack tip. MDT uses the change in crack surface area to vary the available energy per unit area for crack growth and thus to bound the interfacial fracture toughness. Therefore, this technique uses a single sample to measure the interfacial fracture toughness. Since the deformations remain elastic, a mechanics-based solution can be used to correlate test parameters to the energy release rate. Common IC fabrication techniques are used to prepare the sample and execute the test, thereby making the test compatible with current microelectronic or MEMS facilities. Using the MDT, interfacial fracture toughness (Γ) bounds were found for a Ti/Si interface at three mode mixes. At a mode mix of 19.5 deg, 5.97J/m2⩽Γ⩽7.87J/m2, at a mode mix of 23 deg, 9.32J/m2⩽Γ⩽10.42J/m2, and at a mode mix of 30 deg, 12.70J/m2⩽Γ⩽17.02J/m2.


Author(s):  
Mitul B. Modi ◽  
Suresh K. Sitaraman

Delamination of intrinsically or residually stressed thin films is commonly encountered in microelectronics and MEMS systems. Thin films typically accrue stresses through micro structural variations caused by physical vapor deposition, thermally induced stresses imposed due to thermal mismatch, and/or extrinsically introduced forces. These stresses can reach upwards of 1 GPa and can easily exceed the strength of the metal thin film interface. Knowledge of the interfacial fracture toughness (Γ) is necessary to predict if delamination will occur. However, measuring Γ is a challenge for thin film interfaces. Typical testing methods such as bimaterial cantilever, microscratch, peel, bulge, or edge lift-off are limited to organic films, cause complex stress fields, can only measure a single mode mix, or cannot achieve the large energy release rates typical of metal thin film interfaces. A new approach based on the decohesion test, called the modified decohesion test (MDT), eliminates these shortcomings of current testing methods. In this approach, a highly stressed super layer is used to drive delamination and “tune-in” the mode mix at the crack tip. Since the deformations remain elastic, a mechanics-based solution can be used to correlate test parameters to the energy release rate. Common IC fabrication techniques are used to prepare the sample and execute the test, thereby making the test compatible with current microelectronic or MEMS facilities. Varying the crack surface area rather than the energy in the super layer allows the ability to bound Γ using a single test wafer providing a 90% savings in resources and 95% savings in time. Other modifications allow application of the method to highly chemically reactive metals and decrease the sample preparation time. Design, preparation, and execution of the MDT are presented. Results of finite element models are used to validate the approach. Results are shown for a Ti/Al2O3 interface.


Author(s):  
Jiantao Zheng ◽  
Suresh K. Sitaraman

Knowledge of the mode-mixity (?) dependent interfacial fracture toughness (Γ) is needed to predict the interface delamination and the component reliability of thin-film structures. Mode-mixity, ?, is a measure of the relative shearing to tensile opening of the interface crack near the tip. Typically, Γ increases as ? increases, such that the delamination is less likely when the loading on the interface is shear-dominated. The measurement of mode-mixity dependent Γ has been a challenge for thin film interfaces. The single-strip superlayer test, developed by the authors, eliminates the shortcomings of current testing methods. This test employs a stress-engineered superlayer to drive the interfacial delamination between the thin-film and the substrate. An innovative aspect of the proposed test is to introduce a release layer of varying width between the interested interfaces to control the amount of energy available for delamination propagation. By designing a decreasing area of the release layer, it is possible to arrest the interfacial delamination at a given location, and the interfacial fracture toughness or critical energy release rate can be found at the location where the delamination ceases to propagate. Design, preparation, and execution of the test are presented. Results are shown for Ti/Si interfaces of different mode mixities.


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