Prediction of the melt/crystal interface geometry in liquid encapsulated Czochralski growth of InP bulk crystals

2003 ◽  
Vol 250 (1-2) ◽  
pp. 189-194 ◽  
Author(s):  
E.N. Bystrova ◽  
V.V. Kalaev ◽  
O.V. Smirnova ◽  
E.V. Yakovlev ◽  
Yu.N. Makarov
Keyword(s):  
Czochralski Growth ◽  
Bulk Crystals ◽  
Crystal Interface ◽  
Interface Geometry

Numerical Study of the Effect of Magnetic Fields on Melt-Crystal Interface-Deflection in Czochralski Crystal Growth

2003 ◽  
Author(s):  
Lijun Liu ◽  
Koichi Kakimoto
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Numerical Study ◽  
Silicon Crystal ◽  
Czochralski Growth ◽  
Thermal Flow ◽  
Interface Shape ◽  
Convective Thermal ◽  
And Control ◽  
Crystal Interface

In order to control the impurity distribution and remove defects in a crystal grown in Czochralski growth for high quality crystals of silicon, it is necessary to study and control the melt-crystal interface shape, which plays an important role in control of the crystal quality. The melt-crystal interface interacts with and is determined by the convective thermal flow of the melt in the crucible. Application of magnetic field in the Czochralski system is an effective tool to control the convective thermal flow in the crucible. Therefore, the shape of the melt-crystal interface can be modified accordingly. Numerical study is performed in this paper to understand the effect of magnetic field on the interface deflection in Czochralski system. Comparisons have been carried out by computations for four arrangements of the magnetic field: without magnetic field, a vertical magnetic field and two types of cusp-shaped magnetic field. The velocity, pressure, thermal and electromagnetic fields are solved with adaptation of the mesh to the iteratively modified interface shape. The multi-block technique is applied to discretize the melt field in the crucible and the solid field of silicon crystal. The unknown shape of the melt-crystal interface is achieved by an iterative procedure. The computation results show that the magnetic fields have obvious effects on both the pattern and strength of the convective flow and the interface shape. Applying magnetic field in the Czochralski system, therefore, is an effective tool to control the quality of bulk crystal in Czochralski growth process.

Effect of the pulling, crystal and crucible rotation rate on the thermal stress and the melt–crystal interface in the Czochralski growth of germanium crystals

CrystEngComm ◽  
2021 ◽  
Vol 23 (39) ◽  
pp. 6967-6976
Author(s):  
Mahboobeh Saadatirad ◽  
Mohammad Hossein Tavakoli ◽  
Hossein Khodamoradi ◽  
Seyedeh Razieh Masharian
Keyword(s):  
Thermal Stress ◽  
Rotation Rate ◽  
Czochralski Growth ◽  
Interface Shape ◽  
Crucible Rotation ◽  
Crystal Interface

The effect of the pulling rate on the melt–crystal interface shape and melt streamline is investigated.

scholarly journals Quasi-Transient Calculation of Czochralski Growth of Ge Crystals Using the Software Elmer

Crystals ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 18 ◽  
Author(s):  
Wolfram Miller ◽  
Nikolay Abrosimov ◽  
Jörg Fischer ◽  
Alexander Gybin ◽  
Uta Juda ◽  
...  
Keyword(s):  
Open Source Software ◽  
Numerical Scheme ◽  
Stress Fields ◽  
Process Time ◽  
Inductive Heating ◽  
Czochralski Growth ◽  
Czochralski Process ◽  
Growth Experiments ◽  
Crystal Interface ◽  
Good Agreement

A numerical scheme was developed to compute the thermal and stress fields of the Czochralski process in a quasi-time dependent mode. The growth velocity was computed from the geometrical changes in melt and crystal due to pulling for every stage, for which the thermal and stress fields were computed by using the open source software Elmer. The method was applied to the Czochralski growth of Ge crystals by inductive heating. From a series of growth experiments, we chose one as a reference to check the validity of the scheme with respect to this Czochralski process. A good agreement both for the shapes of the melt/crystal interface at various time steps and the change in power consumption with process time was observed.

Czochralski growth of bulk crystals of Ge1−xSix alloys

1998 ◽  
Vol 191 (3) ◽  
pp. 393-398 ◽  
Author(s):  
I Yonenaga ◽  
M Nonaka
Keyword(s):  
Czochralski Growth ◽  
Bulk Crystals

Czochralski growth of bulk crystals of Ge1-xSix alloys

1998 ◽  
Vol 183 (1-2) ◽  
pp. 109-116 ◽  
Author(s):  
A. Matsui ◽  
I. Yonenaga ◽  
K. Sumino
Keyword(s):  
Czochralski Growth ◽  
Bulk Crystals

Lattice imaging and pore structure of β ferric oxyhydroxide

1978 ◽  
Vol 36 (1) ◽  
pp. 264-265
Author(s):  
T. Baird ◽  
J.R. Fryer ◽  
S.T. Galbraith
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Bulk Material ◽  
Model Structure ◽  
Bulk Crystals ◽  
Lattice Imaging ◽  
Thin Sections ◽  
Ferric Oxyhydroxide ◽  
Resolution Electron ◽  
Hydrolysis Of

Introduction Previously we had suggested (l) that the striations observed in the pod shaped crystals of β FeOOH were an artefact of imaging in the electron microscope. Contrary to this adsorption measurements on bulk material had indicated the presence of some porosity and Gallagher (2) had proposed a model structure - based on the hollandite structure - showing the hollandite rods forming the sides of 30Å pores running the length of the crystal. Low resolution electron microscopy by Watson (3) on sectioned crystals embedded in methylmethacrylate had tended to support the existence of such pores.We have applied modern high resolution techniques to the bulk crystals and thin sections of them without confirming these earlier postulatesExperimental β FeOOH was prepared by room temperature hydrolysis of 0.01M solutions of FeCl3.6H2O, The precipitate was washed, dried in air, and embedded in Scandiplast resin. The sections were out on an LKB III Ultramicrotome to a thickness of about 500Å.

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

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