Photoluminescence characterization of Cd-annealing effects on high purity CdTe single crystals

2003 ◽  
Vol 252 (1-3) ◽  
pp. 102-106 ◽  
Author(s):  
S.H. Song ◽  
J.F. Wang ◽  
G.M. Lalev ◽  
L. He ◽  
M. Isshiki
Keyword(s):  
Single Crystals ◽  
High Purity ◽  
Annealing Effects

Growth and characterization of high purity single crystals of barium ferrite

1993 ◽  
Vol 130 (3-4) ◽  
pp. 533-542 ◽  
Author(s):  
M.A. Wittenauer ◽  
J.A. Nyenhuis ◽  
A.I. Schindler ◽  
H. Sato ◽  
F.J. Friedlaender ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Purity ◽  
Barium Ferrite

Characterization of Thermal Annealed Bi Implanted Silica

1992 ◽  
Vol 279 ◽  
Author(s):  
S. H. Morgan ◽  
D. O. Henderson ◽  
Z. Pan ◽  
R. H. Magruder ◽  
R. A. Zuhr
Keyword(s):  
Optical Absorption ◽  
Thermal Annealing ◽  
High Purity ◽  
Reflection Spectra ◽  
Infrared Reflectance ◽  
Infrared Reflection ◽  
Before And After ◽  
Annealing Effects

ABSTRACTOptical and infrared reflection spectra for Bi implanted silica are reported as a function of dose and thermal annealing. A series of high purity silica samples were implanted with Bi ions at an energy of 350 KeV. Doses were 1 × 1016 and 1.0 × 1017ions/cm2 at 5μamps/cm2. The samples were subsequently thermally annealed at 400, 600 and 800 C. The optical absorption from 6.2 to 1.8 eV and infrared reflectance from 5000 to 450 cm”−1 were measured before and after annealing. Effects of thermal annealing are strongly dependent on Bi content.

Growth and characterization of high purity CdTe single crystals

1997 ◽  
Vol 172 (3-4) ◽  
pp. 370-375 ◽  
Author(s):  
B. Yang ◽  
Y. Ishikawa ◽  
Y. Doumae ◽  
T. Miki ◽  
T. Ohyama ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Purity

Growth and characterization of high-purity SiC single crystals

2000 ◽  
Vol 211 (1-4) ◽  
pp. 339-342 ◽  
Author(s):  
G Augustine ◽  
V Balakrishna ◽  
C.D Brandt
Keyword(s):  
Single Crystals ◽  
High Purity

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

DISLOCATION RELAXATION PEAKS IN HIGH PURITY TUNGSTEN SINGLE CRYSTALS

1983 ◽  
Vol 44 (C9) ◽  
pp. C9-691-C9-696 ◽  
Author(s):  
U. Ziebart ◽  
H. Schultz
Keyword(s):  
Single Crystals ◽  
High Purity
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