Selective area epitaxy of GaAs and InGaAs by ultra-high vacuum chemical vapor deposition using triethylgallium, trimethylindium, arsine, and monoethylarsine
1996 ◽
Vol 169
(3)
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pp. 429-434
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Keyword(s):
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1991 ◽
Vol 6
(9)
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pp. 1913-1918
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2019 ◽
Vol 507
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pp. 113-117
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Keyword(s):
1999 ◽
Vol 38
(Part 2, No. 10A)
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pp. L1099-L1101
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2006 ◽
Vol 11-12
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pp. 693-696
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1995 ◽
Vol 150
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pp. 994-998
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