Homoepitaxial growth of a-axis oriented YBa2Cu3O7 − δ thin films on single crystals

1997 ◽  
Vol 179 (3-4) ◽  
pp. 451-458 ◽  
Author(s):  
M. Konishi ◽  
J.G. Wen ◽  
Y. Matsunaga ◽  
Y. Enomoto ◽  
S. Koyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
Homoepitaxial Growth

Homoepitaxial growth of YBCO thin films an YBCO single crystals

1995 ◽  
Vol 5 (2) ◽  
pp. 1229-1232 ◽  
Author(s):  
M. Konishi ◽  
J.G. Wen ◽  
H. Fuke ◽  
Y. Matsunaga ◽  
K. Hayashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
Homoepitaxial Growth ◽  
Ybco Thin Films

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

Surface acoustic wave measurements of YBa2Cu3O7−δ thin films and single crystals

1997 ◽  
Vol 70 (11) ◽  
pp. 1468-1470 ◽  
Author(s):  
R. Gaffney ◽  
C. Hucho ◽  
J. R. Feller ◽  
M. J. McKenna ◽  
B. K. Sarma ◽  
...  
Keyword(s):  
Thin Films ◽  
Acoustic Wave ◽  
Single Crystals ◽  
Surface Acoustic Wave ◽  
Wave Measurements

Electronic band structure of gallium nitride: a comparative angle-resolved photoemission study of single crystals and thin films

2002 ◽  
Vol 507-510 ◽  
pp. 223-228 ◽  
Author(s):  
L. Plucinski ◽  
T. Strasser ◽  
B.J. Kowalski ◽  
K. Rossnagel ◽  
T. Boetcher ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Band Structure ◽  
Single Crystals ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Photoemission Study

Paramagnetic Character in Thin Films of Metal-Free Organic Magnets Deposited on TiO2(110) Single Crystals

2013 ◽  
Vol 117 (50) ◽  
pp. 26675-26679 ◽  
Author(s):  
Reza Kakavandi ◽  
Sabine-Antonia Savu ◽  
Andrea Caneschi ◽  
Maria Benedetta Casu
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
Metal Free ◽  
Organic Magnets

scholarly journals A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals

2013 ◽  
Vol 84 (12) ◽  
pp. 123905 ◽  
Author(s):  
Anand Kamlapure ◽  
Garima Saraswat ◽  
Somesh Chandra Ganguli ◽  
Vivas Bagwe ◽  
Pratap Raychaudhuri ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Superconducting Thin Films ◽  
Tunneling Microscope ◽  
Insulating Substrates

scholarly journals Electronic and Crystallographic Examinations of the Homoepitaxially Grown Rubrene Single Crystals

Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 1978 ◽  
Author(s):  
Yasuo Nakayama ◽  
Masaki Iwashita ◽  
Mitsuru Kikuchi ◽  
Ryohei Tsuruta ◽  
Koki Yoshida ◽  
...  
Keyword(s):  
Single Crystals ◽  
Valence Band ◽  
Lattice Distortion ◽  
Grazing Incidence ◽  
Valence Band Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Homoepitaxial Growth ◽  
Highly Sensitive ◽  
Doping Ratio

Homoepitaxial growth of organic semiconductor single crystals is a promising methodology toward the establishment of doping technology for organic opto-electronic applications. In this study, both electronic and crystallographic properties of homoepitaxially grown single crystals of rubrene were accurately examined. Undistorted lattice structures of homoepitaxial rubrene were confirmed by high-resolution analyses of grazing-incidence X-ray diffraction (GIXD) using synchrotron radiation. Upon bulk doping of acceptor molecules into the homoepitaxial single crystals of rubrene, highly sensitive photoelectron yield spectroscopy (PYS) measurements unveiled a transition of the electronic states, from induction of hole states at the valence band maximum at an adequate doping ratio (10 ppm), to disturbance of the valence band itself for excessive ratios (≥ 1000 ppm), probably due to the lattice distortion.

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