Synchrotron White Beam X-Ray Topography Characterization of LGX and SXGS Bulk Single Crystals, Thin Films and Piezoelectric Devices

2007 ◽  
Author(s):  
Michael Dudley
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
X Ray ◽  
White Beam ◽  
Bulk Single Crystals ◽  
Piezoelectric Devices

Characterization of Defect Structures in 3C-SiC Single Crystals Using Synchrotron White Beam X-ray Topography

1996 ◽  
Vol 423 ◽  
Author(s):  
W. Huang ◽  
M. Dudley ◽  
C. Fazi
Keyword(s):  
Single Crystals ◽  
Stacking Faults ◽  
Interference Microscopy ◽  
Defect Structures ◽  
Growth Sector ◽  
X Ray ◽  
Partial Dislocations ◽  
White Beam ◽  
Transmission And Reflection

AbstractDefect structures in (111) 3C-SiC single crystals, grown using the Baikov technique, have been studied using Synchrotron White Beam X-ray Topography (SWBXT). The major types of defects include complex growth sector boundary structures, double positioning twins, stacking faults on { 111 } planes, inclusions and dislocations (including growth dislocations and partial dislocations bounding stacking faults). Detailed stacking fault and double positioning twin configurations are determined using a combination of Nomarski interference microscopy, SEM and white beam x-ray topography in both transmission and reflection geometries. Possible defect generation phenomena are discussed.

Characterization of Defect Structures in SiC Single Crystals Using Synchrotron X-Ray Topography

1993 ◽  
Vol 307 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
C. Carter ◽  
D. Asbury ◽  
C. Fazit
Keyword(s):  
Detailed Analysis ◽  
Single Crystals ◽  
Basal Plane ◽  
Defect Structures ◽  
Dislocation Generation ◽  
Screw Dislocations ◽  
X Ray ◽  
White Beam

ABSTRACTSynchrotron white beam X-ray topography has been used to characterize defect structures in 6H-SiC wafers grown on (0001) seeds. Two major types of defects are observed: super screw dislocations approximately perpendicular to the basal plane and dislocation networks lying in the basal plane. The super screw dislocations, which have open cores, are growth dislocations. These dislocations act as sources and/or sinks for the glide dislocation networks. Detailed analysis and discussion of dislocation generation phenomena and Burgers vectors will be presented.

Characterization of structural defects in MLEK grown InP single crystals using synchrotron white beam X-ray topography

1997 ◽  
Vol 174 (1-4) ◽  
pp. 230-237 ◽  
Author(s):  
H. Chung ◽  
W. Si ◽  
M. Dudley ◽  
A. Anselmo ◽  
D.F. Bliss ◽  
...  
Keyword(s):  
Single Crystals ◽  
Structural Defects ◽  
X Ray ◽  
White Beam

Characterization of Defect Structures in Lely 6H-SiC Single Crystals Using Synchrotron White Beam X-Ray Topography

1994 ◽  
Vol 375 ◽  
Author(s):  
W. Huang ◽  
S. Wang ◽  
M. Dudley ◽  
P. Neudeck ◽  
J. A. Powell ◽  
...  
Keyword(s):  
Single Crystals ◽  
Basal Plane ◽  
Stacking Faults ◽  
Defect Structures ◽  
Dislocation Generation ◽  
X Ray ◽  
Partial Dislocations ◽  
White Beam ◽  
Generation Mechanisms

AbstractDefect structures in Lely SiC single crystals have been studied using synchrotron white beam X-ray topography. Basal plane dislocations and stacking faults probably generated during post-growth cooling are clearly revealed. For both perfect dislocations and partial dislocations bounding the stacking faults, Burgers vectors and line directions are determined from contrast extinction analysis as well as projected direction analysis on different topographic images. The fault planes and fault vectors of the stacking faults were determined using contrast extinction analysis. Possible dislocation generation mechanisms are briefly discussed.

scholarly journals The Reflection High Energy Electron Diffraction and X-ray Photoelectron Spectroscopy Studies of CeO2 Thin Films on Bi-based Superconducting Bulk Single Crystals.

Shinku ◽  
1994 ◽  
Vol 37 (3) ◽  
pp. 183-186
Author(s):  
Yusuke GOTO ◽  
Hiroyuki TSUCHIDA ◽  
Heizo TOKUTAKA ◽  
Satoru KISHIDA ◽  
Kikuo FUJIMURA ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
X Ray ◽  
Bulk Single Crystals ◽  
Spectroscopy Studies

scholarly journals Growth of single crystals of methylammonium lead mixedhalide perovskites

2018 ◽  
Vol 28 (3) ◽  
pp. 237 ◽  
Author(s):  
Thuat Nguyen-Tran ◽  
Mai Ngoc An ◽  
Trang Thu Luong ◽  
Hung Huy Nguyen ◽  
Tu Thanh Truong
Keyword(s):  
Single Crystals ◽  
Growth Parameters ◽  
Optical Microscope ◽  
Inverse Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Bulk Single Crystals ◽  
Halide Perovskites ◽  
Temperature Crystallization

We report the growth and characterization of different bulk single crystals of organo lead mixed halide perovskites CH3NH3PbI3−xBrx by two different crystal growth approaches: (i)anti-solvent diffusion, and (ii) inverse temperature crystallization. In order to control the size and the shape of crystals, we have investigated different experimental growth parameters such as temperature and precursor concentration. The morphology of obtained crystals was observed by optical microscope, whereas their intrinsic crystalline properties were characterized by single crystal as well as powder X-ray diffraction. The results illustrated that the growth and crystalline structure of mixed halide perovskites CH3NH3PbI3−xBrx could be easily tuned.

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

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