Capacitance-voltage measurements and flat-band potential determination on Zr-doped α-Fe2O3 single-crystal electrodes

1983 ◽  
Vol 159 (2) ◽  
pp. 421-436 ◽  
Author(s):  
Gilles Horowitz
Keyword(s):  
Single Crystal ◽  
Flat Band ◽  
Flat Band Potential ◽  
Capacitance Voltage

Flat band potential of as-grown n-MoSe2 single crystal electrodes

1988 ◽  
Vol 110 (1) ◽  
pp. 293-299 ◽  
Author(s):  
R. Srivastava ◽  
V. M. Pathak ◽  
V. V. Rao
Keyword(s):  
Single Crystal ◽  
Flat Band ◽  
Flat Band Potential

Flat Band Potential of As-Grown n-MoSe2 Single Crystal Electrodes

1988 ◽  
pp. 293-301
Author(s):  
R. Srivastava ◽  
V. M. Pathak ◽  
V. V. Rao
Keyword(s):  
Single Crystal ◽  
Flat Band ◽  
Flat Band Potential

Radiation Hardness for Silicon Oxide and Aluminum Oxide on 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 229-232 ◽  
Author(s):  
Anders Hallén ◽  
Sethu Saveda Suvanam
Keyword(s):  
Proton Irradiation ◽  
Silicon Oxide ◽  
Positive Charge ◽  
Gate Dielectric ◽  
Radiation Hardness ◽  
Flat Band ◽  
Capacitance Voltage ◽  
Cv Measurements ◽  
Radiation Hard ◽  
Mos Structures

The radiation hardness of two dielectrics, SiO2and Al2O3, deposited on low doped, n-type 4H-SiC epitaxial layers has been investigated by exposing MOS structures involving these materials to MeV proton irradiation. The samples are examined by capacitance voltage (CV) measurements and, from the flat band voltage shift, it is concluded that positive charge is induced in the exposed structures detectable for fluence above 1×1011cm-2. The positive charge increases with proton fluence, but the SiO2/4H-SiC structures are slightly more sensitive, showing that Al2O3can provide a more radiation hard passivation, or gate dielectric for 4H-SiC devices.

Fermi level pinning or semiconductor electrodes in aqueous and non aqueous electrolytes: influence of the modification of the electrode surface

1989 ◽  
Vol 67 (3) ◽  
pp. 382-388 ◽  
Author(s):  
O. Savadogo
Keyword(s):  
Fermi Level ◽  
Acidic Medium ◽  
Open Circuit ◽  
Flat Band ◽  
Flat Band Potential ◽  
Fermi Level Pinning ◽  
Material Surfaces ◽  
Electrolyte Interface ◽  
Semiconductor Electrodes ◽  
Minority Carriers

Modification of several semiconductors material surfaces with H4SiW12O40•nH2O have been carried out to produce an increase in the open circuit photopotential at the semiconductor/electrolyte interface (Voc) without changing the flat-band potential. The augmentation of Voc is shown to be attributed to a decrease of the minority carriers recombination at the semiconductor/electrolyte interface along with the suppression of Fermi level pinning. The enhancement of Voc and the electrocatalytic activity of the hydrogen evolution reaction in acidic medium of the derivatized electrodes is attributed to the Fermi level unpinning. Keywords: photoelectrodes, photoelectrocatalysis, pinning, modification improvement.

scholarly journals Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
M. R. Balboul ◽  
A. Abdel-Galil ◽  
I. S. Yahia ◽  
A. Sharaf
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Electrical Response ◽  
Charge Carrier Concentration ◽  
Flat Band ◽  
Voltage Measurement ◽  
Deep Traps ◽  
Cds Thin Film ◽  
Depth Analysis ◽  
Capacitance Voltage

Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose ofγ-irradiation increases the activation energy of CdS thin film. In addition,γ-irradiation was used to change the sign of Hall coefficient,RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change afterγ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap afterγ-irradiation. Several parameters were also studied such as charge carrier concentration,ND, and flat band potential,Vfb. Theγ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.

FeCoW multimetal oxide-coated W:BiVO4 photoanode for efficient oxygen evolution

2018 ◽  
Vol 2 (9) ◽  
pp. 2053-2059 ◽  
Author(s):  
Xiaorong Liang ◽  
Jiale Xie ◽  
Jinyun Xiong ◽  
Liangping Gong ◽  
Chang Ming Li
Keyword(s):  
Oxygen Evolution ◽  
Flat Band ◽  
Flat Band Potential ◽  
Negative Shift

A FeCoW multimetal oxide-coated W:BiVO4 photoanode performs a 3.8 times photocurrent and a negative shift of the flat-band potential by 280 mV in comparison to a W:BiVO4 photoanode.

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