scholarly journals Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
M. R. Balboul ◽  
A. Abdel-Galil ◽  
I. S. Yahia ◽  
A. Sharaf
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Electrical Response ◽  
Charge Carrier Concentration ◽  
Flat Band ◽  
Voltage Measurement ◽  
Deep Traps ◽  
Cds Thin Film ◽  
Depth Analysis ◽  
Capacitance Voltage

Gamma irradiation method has been used to change the electrical properties of CdS thin film. A specific dose ofγ-irradiation increases the activation energy of CdS thin film. In addition,γ-irradiation was used to change the sign of Hall coefficient,RH, of CdS thin film from negative to positive irrespective of temperature. The Hall mobility mechanism shows noticeable change afterγ-irradiation from decreasing to increasing with raising the temperature. In depth, analysis was done using capacitance-voltage measurement in order to realize the modification in the CdS/Si junction band gap afterγ-irradiation. Several parameters were also studied such as charge carrier concentration,ND, and flat band potential,Vfb. Theγ-irradiation was found to increase the concentration of the deep traps within the band gap of the CdS/Si heterojunction.

Study of ZnTe:Cu Back Contacts on CdTe/CdS Thin Film Solar Cells

1996 ◽  
Vol 426 ◽  
Author(s):  
J. Tang ◽  
L. Feng ◽  
D. Mao ◽  
W. Song ◽  
Y. Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Energy Conversion Efficiency ◽  
Cdte Layer ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Metal Contacts ◽  
Cds Thin Film ◽  
Capacitance Voltage ◽  
Post Deposition

AbstractVacuum-evaporated Cu-doped ZnTe films have been studied as the intermediate layer between CdTe and metal contacts in CdTe/CdS thin-film solar cells for the formation of low resistance back contacts. Different metals (Au, Ni, Co) have been investigated as the contact material to the ZnTe layer. The effects of Cu concentration, ZnTe:Cu layer thickness, and ZnTe post-deposition annealing temperature on the cell performances have been investigated. We found that different metal contacts on the ZnTe layer lead to different doping densities in the CdTe layer and different open-circuit photovoltages of the solar cells. The possible formation of a back contact diode at the CdTe/ZnTe interface was explored, based on capacitance-voltage analysis. The series resistance of the CdTe/CdS cells was reduced significantly by the introduction of the ZnTe layer. Fill factors greater than 0.76 and an energy conversion efficiency of 12.9% have been achieved using ZnTe back contacts on electrodeposited CdTe.

PHOTOCAPACITANCE OF GaAs THIN-FILM STRUCTURES FABRICATED ON A SEMI-INSULATING COMPENSATED SUBSTRATE

2004 ◽  
Vol 14 (03) ◽  
pp. 775-784
Author(s):  
NIKOLAI B. GOREV ◽  
INNA F. KODZHESPIROVA ◽  
EVGENY N. PRIVALOV ◽  
NINA KHUCHUA ◽  
LEVAN KHVEDELIDZE ◽  
...  
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
Epitaxial Film ◽  
Low Frequency ◽  
Physical Mechanisms ◽  
Deep Traps ◽  
Barrier Capacitance ◽  
Capacitance Voltage ◽  
Positive Peak ◽  
Film Substrate

The results of analytical and numerical calculations of the low-frequency and the high-frequency barrier capacitance of GaAs epitaxial and ion-implanted structures fabricated on a semi-insulating compensated substrate are presented. The calculations are done for the samples in the dark and under extrinsic illumination. It is shown that the high-frequency photocapacitance of these structures exhibits a narrow peak, and the low-frequency photocapacitance has a positive peak followed by a negative valley. The underlying physical mechanisms are discussed. Methods for predicting the MESFET threshold voltage and extracting the concentration of vacant deep traps in the vicinity of the film–substrate interface and the epitaxial film thickness using capacitance–voltage measurements under extrinsic illumination are proposed.

Electrical Properties of RF Sputtered CdTe/CdS Thin Film Solar Cells

2009 ◽  
Vol 2 (1) ◽  
pp. 110-112 ◽  
Author(s):  
Sheeja Krishnan ◽  
Ganesh Sanjeev ◽  
Manjunatha Pattabi ◽  
X. Mathew
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electrical Properties ◽  
Thin Film Solar Cells ◽  
Cds Thin Film

Solution-processed pure Cu2ZnSnS4/CdS thin film solar cell with 7.5% efficiency

2021 ◽  
Vol 114 ◽  
pp. 110947
Author(s):  
Eka Cahya Prima ◽  
Lydia Helena Wong ◽  
Ahmad Ibrahim ◽  
Nugraha ◽  
Brian Yuliarto
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Solution Processed ◽  
Cds Thin Film

scholarly journals Routes to develop a [S]/([S]+[Se]) gradient in wide band-gap Cu2ZnGe(S,Se)4 thin-film solar cells

2021 ◽  
Vol 868 ◽  
pp. 159253
Author(s):  
Andrea Ruiz-Perona ◽  
Galina Gurieva ◽  
Michael Sun ◽  
Tim Kodalle ◽  
Yudania Sánchez ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Thin Film Solar Cells ◽  
Wide Band Gap

Simulation and modeling of the influence of temperature on CdS/CdTe thin film solar cell

2019 ◽  
Vol 87 (3) ◽  
pp. 30101 ◽  
Author(s):  
Abdel-baset H. Mekky
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Influence Of Temperature ◽  
Cdte Solar Cell ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Influence Of Temperature On

Semiconductor materials cadmium sulfide (CdS) and cadmium telluride (CdTe) are employed in the fabrication of thin film solar cells of relatively excessive power conversion efficiency and low producing price. Simulations of thin film CdS/CdTe solar cell were carried out using SCAPS-1D. The influence of temperature field on the variation of CdTe solar cell parameters such as current–voltage, capacitance–voltage characteristics and the external quantum efficiency was investigated theoretically. For use temperatures, one obtains the external quantum efficiency has the same profiles. However, the effect of the temperature on the Mott-Schottky curves is slightly noted by variations on the characteristics. This conclusion can be used by solar cell manufacturers to improve the solar cell parameters with the biggest possible gain in device performance.

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