Time-resolved spectroscopic study of Eu(TTA)3(TPPO)2 chelate in situ synthesized in vinyltriethoxysilane-derived sol–gel-processed glass

2002 ◽  
Vol 96 (2-4) ◽  
pp. 211-218 ◽  
Author(s):  
Guodong Qian ◽  
Z. Yang ◽  
Minquan Wang
2008 ◽  
Vol 48 (1-2) ◽  
pp. 253-259 ◽  
Author(s):  
Plinio Innocenzi ◽  
Tongjit Kidchob ◽  
Luca Malfatti ◽  
Stefano Costacurta ◽  
Masahide Takahashi ◽  
...  

2014 ◽  
Vol 70 (a1) ◽  
pp. C874-C874
Author(s):  
Mirijam Zobel ◽  
Reinhard Neder

Semiconductor nanoparticles (NP) such as zinc oxide (ZnO) are commonly produced in sol-gel processes. The final NP powders are well characterized with respect to their crystallinity, which fundamentally governs their physical and chemical properties. Nevertheless, the nucleation process and the evolution of crystallinity of the nucleating NPs is not yet understood [1]. With the advent of the Rapid Acquisition Pair Distribution Function (PDF) method, time-resolved PDF studies have become possible, and the distinction between molecular clusters and nanoparticles in 1 M aqueous solutions of metal oxide NPs [2] has been demonstrated. However, nucleation in dilute sol-gel processes in more complex organic solutions remains untackled [1]. Our experiments are, to our knowledge, the first in-situ PDF studies in organic solvents. We used a 30 mM ethanolic solution of zinc acetate dihydrate. Several hours after the addition of the organic base tetramethylammonium hydroxide, monodisperse ZnO powders can be obtained. However, directly upon the base addition primary tetrahedral precursors Zn4OAc6 form. Approx. 1 hour later, they evolve into stable magic sized clusters (MSC) of 1.3 nm diameter and wurtzitic structure. Though known to exist for II-VI semiconductor NP such as CdSe [3], MSCs have not been demonstrated for ZnO before. With ongoing reaction time, the final spherical NPs of 2.5 nm diameter evolve at the expense of the MSCs and exist for several hours without undergoing further growth. SAXS studies confirm the PDF data. Fig. 1 shows the experimental PDFs and their fits. The fits are multiphase models of the precursor, the MSC and NP. The solvent shows intermolecular ordering effects whose contribution to the PDF was modelled by a low-frequency wave function. The MSC and NP sketches show a view along the crystallographic c-axis. Based upon these state-of-the art in-situ PDF studies, we suggest a nucleation model based on the existence of magic-sized clusters.


2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.


Author(s):  
J. Allègre ◽  
P. Lefebvre ◽  
J. Camassel ◽  
B. Beaumont ◽  
Pierre Gibart

Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.


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