Very high frequency hydrogen plasma treatment of growing surfaces: a study of the p-type amorphous to microcrystalline silicon transition

2000 ◽  
Vol 266-269 ◽  
pp. 624-629 ◽  
Author(s):  
C Summonte ◽  
R Rizzoli ◽  
A Desalvo ◽  
F Zignani ◽  
E Centurioni ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
High Frequency ◽  
Hydrogen Plasma ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
P Type ◽  
Very High

DEVELOPMENT OF HIGHLY CONDUCTIVE P-TYPE MICROCRYSTALLINE SILICON FILMS FOR N–I–P FLEXIBLE SOLAR CELLS APPLICATION

2010 ◽  
Vol 24 (28) ◽  
pp. 5527-5538 ◽  
Author(s):  
Q. S. LEI ◽  
H. X. XU ◽  
J. P. XU
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
Amorphous Silicon ◽  
Treatment Time ◽  
Hydrogen Plasma ◽  
Dark Conductivity ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Nucleation Layer ◽  
P Type

In this paper, we reported highly conductive p-type microcrystalline silicon (μc- Si:H ) films deposited on amorphous silicon (a- Si:H ) surface by very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) technique. Hydrogen plasma treatment of amorphous silicon surface and nucleation layers were introduced prior to μc- Si:H films deposition. The film properties were investigated by using Raman spectra, scanning electron microscope (SEM), optical transmission and reflection, as well as dark conductivity measurements. The influence of plasma treatment and nucleation layer on the growth and properties of the thin p-type μc- Si:H films was studied. It is demonstrated that the hydrogen plasma treatment of a- Si:H films gives rise to the deposition of μc- Si:H on the a- Si:H surface. Also, the growth and properties of the μc- Si:H films are strongly dependent on the nucleation layer. The dark conductivity (σd) and crystalline fraction increase with the plasma treatment time and attain high values at about 600 s. A p-type μc- Si:H film with conductivity of 0.0875 Scm-1 at a thickness of 30 nm was obtained. The film was introduced as window layers for flexible solar cells. An efficiency of about 7.15% was obtained.

Microstructure and Electric Transport Characteristic of Microcrystalline Silicon Films Fabricated by Very High Frequency Plasma Enhanced Chemical Vapor Deposition

2010 ◽  
Vol 663-665 ◽  
pp. 600-603
Author(s):  
Xiang Wang ◽  
Rui Huang ◽  
Jie Song ◽  
Yan Qing Guo ◽  
Chao Song ◽  
...  
Keyword(s):  
High Frequency ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Hydrogen Flow ◽  
Transmission Electron ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

Microcrystalline silicon (μc-Si:H) film deposited on silicon oxide in a very high frequency plasma enhanced chemical vapor deposition with highly H2 dilution of SiH4 has been investigated by Raman spectroscopy and high resolution transmission electron microscopy. Raman spectroscopy results show that the crystalline volume fraction increases with increasing the hydrogen flow rate and for the hydrogen flow rate of 160 sccm, the crystalline volume fraction reaches to 67.5%. Nearly parallel columnar structures with complex microstructure are found from cross-sectional transmission electron microscopy images of the film. The temperature depend dark conductivity and activation energy are studied in order to investigate the electronic transport processes in the nc-Si films.

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