Metal oxide thin films show promising resistive switching properties, making them materials of reference for the development of memristive devices. TiO2 is probably one of the most studied materials and is being synthesized using various techniques, each of them having specific optimizable characteristics. In this paper, we report on an innovative approach by combining the sol–gel and the pulsed microplasma cluster source (PMCS) methods, exploiting the low temperature and low cost of the former process and precise control over nanocristallinity of the latter. We show that this approach overcomes the reported limitations that each technique shows in fabricating memristive devices when independently used. A side-by-side comparison of the TiO2 thin films produced by the PMCS, sol–gel, and PMCS/sol–gel hybrid methods (HM) demonstrates an improvement of the memristive properties and a reduction of the electrical shorts in the TiO2 based devices.
Merging the Sol–Gel Technique with the Pulsed Microplasma Cluster Source Deposition to Improve Control over the Memristive Response of TiO2 Thin Films
