Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide

2002 ◽  
Vol 46 (9) ◽  
pp. 1375-1380 ◽  
Author(s):  
S.-M Koo ◽  
S.-K Lee ◽  
C.-M Zetterling ◽  
M Östling
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Plasma Etch

The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

2003 ◽  
Vol 42 (Part 2, No. 6B) ◽  
pp. L625-L627 ◽  
Author(s):  
Takeshi Ohshima ◽  
Kin Kiong Lee ◽  
Yuuki Ishida ◽  
Kazutoshi Kojima ◽  
Yasunori Tanaka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Cubic Silicon Carbide

Reliability of metal-oxide-semiconductor capacitors on 6H-silicon carbide

1999 ◽  
Vol 48 (1-4) ◽  
pp. 253-256
Author(s):  
M. Treu ◽  
R. Schörner ◽  
P. Friedrichs ◽  
R. Rupp ◽  
A. Wiedenhofer ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling
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