Reliability of metal-oxide-semiconductor capacitors on 6H-silicon carbide

1999 ◽  
Vol 48 (1-4) ◽  
pp. 253-256
Author(s):  
M. Treu ◽  
R. Schörner ◽  
P. Friedrichs ◽  
R. Rupp ◽  
A. Wiedenhofer ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling

Reliability of metal–oxide–semiconductor capacitors on nitrogen implanted 4H-silicon carbide

1998 ◽  
Vol 84 (5) ◽  
pp. 2943-2948 ◽  
Author(s):  
M. Treu ◽  
E. P. Burte ◽  
R. Schörner ◽  
P. Friedrichs ◽  
D. Stephani ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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