Electrical Characterization of MOS (metal-oxide-semiconductor) Capacitors on Plasma Etch-damaged 4H-Silicon Carbide

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2004.17.4.373 ◽

2004 ◽

Vol 17 (4) ◽

pp. 373-377

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Electrical characterization of instabilities in 6H silicon carbide metal‐oxide‐semiconductor capacitors

Journal of Applied Physics ◽

10.1063/1.357784 ◽

1994 ◽

Vol 76 (2) ◽

pp. 993-997 ◽

Author(s):

Christophe Raynaud ◽

Jean‐Luc Autran ◽

Bernard Balland ◽

Gérard Guillot ◽

Claude Jaussaud ◽

...

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1849424 ◽

2005 ◽

Vol 97 (4) ◽

pp. 046106 ◽

Author(s):

Stephen K. Powell ◽

Neil Goldsman ◽

Aivars Lelis ◽

James M. McGarrity ◽

Flynn B. McLean

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Modeling

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Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide

Solid-State Electronics ◽

10.1016/s0038-1101(02)00068-0 ◽

2002 ◽

Vol 46 (9) ◽

pp. 1375-1380 ◽

Author(s):

S.-M Koo ◽

S.-K Lee ◽

C.-M Zetterling ◽

M Östling

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

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Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.2335967 ◽

2006 ◽

Vol 100 (4) ◽

pp. 044515 ◽

Author(s):

Siddharth Potbhare ◽

Neil Goldsman ◽

Gary Pennington ◽

Aivars Lelis ◽

James M. McGarrity

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Experimental Characterization ◽

Effect Transistor

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Annealing condition optimization and electrical characterization of amorphous LaAlO3∕GaAs metal-oxide-semiconductor capacitors

Applied Physics Letters ◽

10.1063/1.2748308 ◽

2007 ◽

Vol 90 (24) ◽

pp. 243505 ◽

Author(s):

Donghun Choi ◽

James S. Harris ◽

Maitri Warusawithana ◽

Darrell G. Schlom

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Annealing Condition ◽

Condition Optimization

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Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc[sub 2]O[sub 3] as the Gate Oxide

Electrochemical and Solid-State Letters ◽

10.1149/1.1479298 ◽

2002 ◽

Vol 5 (7) ◽

pp. G51 ◽

Author(s):

R. Mehandru ◽

B. P. Gila ◽

J. Kim ◽

J. W. Johnson ◽

K. P. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Diode

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Electrical characterization of deoxyribonucleic acid hybridization in metal-oxide-semiconductor-like structures

Applied Physics Letters ◽

10.1063/1.4747452 ◽

2012 ◽

Vol 101 (9) ◽

pp. 093703 ◽

Author(s):

S. Libertino ◽

G. Cannella ◽

V. Aiello ◽

A. Busacca ◽

S. Lombardo

Keyword(s):

Metal Oxide ◽

Deoxyribonucleic Acid ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments

IEEE Electron Device Letters ◽

10.1109/led.2011.2128853 ◽

2011 ◽

Vol 32 (6) ◽

pp. 752-754 ◽

Author(s):

H. D. Trinh ◽

G. Brammertz ◽

E. Y. Chang ◽

C. I. Kuo ◽

C. Y. Lu ◽

...

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Surface Treatments ◽

Oxide Semiconductor

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Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/aba38b ◽

2020 ◽

Vol 53 (44) ◽

pp. 445102

Author(s):

Dongyuan Zhai ◽

Dan Gao ◽

Jing Xiao ◽

Xiaoliang Gong ◽

Jin Yang ◽

...

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps

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Electrical Characterization of Metal–Oxide–Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2680 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2680-2683 ◽

Author(s):

Yan-Li Pei ◽

Takafumi Fukushima ◽

Tetsu Tanaka ◽

Mitsumasa Koyanagi

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

High Density ◽

Oxide Semiconductor ◽

Memory Devices ◽

Semiconductor Memory ◽

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