Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy

2002 ◽  
Vol 46 (9) ◽  
pp. 1427-1431 ◽  
Author(s):  
G.H Jessen ◽  
B.D White ◽  
S.T Bradley ◽  
P.E Smith ◽  
L.J Brillson ◽  
...  
Keyword(s):  
Ohmic Contact

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

The Electrical Characterization of Single ZnO Nanowries Field-Effect Transistors

2010 ◽  
Vol 654-656 ◽  
pp. 1178-1181
Author(s):  
Hui Feng Li ◽  
Yun Hua Huang ◽  
Xiu Jun Xing ◽  
Jia Su ◽  
Yue Zhang
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Vacuum ◽  
Electrical Characterization ◽  
Current Transport ◽  
Zno Nanowire ◽  
Metal Materials ◽  
Scanning Electron

The electrical properties of single ZnO nanowire were researched in the chamber of a scanning electron microscope under high-vacuum conditions using nanomanipulator and measurement system. The result shows that ZnO nanowire resistivity was about 1.4 Ω•cm with Ohmic contact. The local change of electron density induced by Shottky contacts or Ohmic contact with tip and semiconductor/metal materials significantly affects the current transport through the nanowire. Single ZnO nanowire was configured as field effect transistors (FET) and based on metal tantalum (Ta) as electrodes show a pronounced n-type gate modulation with an electron concentration of ~1.0×1019 cm−3 and an electron mobility of ~52 cm2 /V s at a bias voltage of 1 V.

Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs

2007 ◽  
Vol 51 (7) ◽  
pp. 1073-1078 ◽  
Author(s):  
Kuang-Po Hsueh ◽  
Yue-Ming Hsin ◽  
Jinn-Kong Sheu ◽  
Wei-Chih Lai ◽  
Chun-Ju Tun ◽  
...  
Keyword(s):  
Leakage Current ◽  
Ohmic Contact

ChemInform Abstract: Design and Characterization of a Thermally Stable Ohmic Contact Metallization on n-GaAs.

ChemInform ◽  
1990 ◽  
Vol 21 (19) ◽  
Author(s):  
R. P. GUPTA ◽  
W. S. KHOKLE ◽  
J. WUERFL ◽  
H. L. HARTNAGEL
Keyword(s):  
Ohmic Contact ◽  
Thermally Stable ◽  
Contact Metallization

Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H–SiC

2011 ◽  
Vol 257 (24) ◽  
pp. 10737-10742 ◽  
Author(s):  
M. Siad ◽  
M. Abdesselam ◽  
N. Souami ◽  
A.C. Chami
Keyword(s):  
Structural Characterization ◽  
Ohmic Contact

Surface characterization of GaAs after the reactive ion etching of GeMoW ohmic contact in radio frequency SF6–O2 plasma

1993 ◽  
Vol 11 (5) ◽  
pp. 2536-2542 ◽  
Author(s):  
A. Campo ◽  
Ch. Cardinaud ◽  
G. Turban ◽  
C. Dubon‐Chevallier ◽  
V. Amarger ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Ohmic Contact ◽  
Surface Characterization ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
O2 Plasma

Characterization of Sputtered Ge Film

1994 ◽  
Vol 343 ◽  
Author(s):  
Jaeshin Cho ◽  
N. David Theodore
Keyword(s):  
Electrical Resistivity ◽  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Amorphous Structure ◽  
Sharp Transition ◽  
Germanium Film ◽  
Contact Property ◽  
Anneal Temperature

ABSTRACTThe electrical resistivity and microstructure of sputtered germanium film were characterized as a function of anneal temperature from 400 to 700°C. The as-deposited sputtered Ge film had an amorphous structure with resistivity of 165 Ω-cm which was maintained after annealing up to 540°C. After annealing above 550°C, the resistivity dropped by almost four orders of magnitude to ∼0.027 Ω-cm. The sharp transition of resistivity at 550°C is believed to be due to the recrystallization of Ge film from the as-deposited amorphous structure. The ohmic contact property on Ge films was also evaluated using sputtered tungsten. Low resistance ohmic contacts were obtained both on as-deposited and annealed Ge films, with typical ohmic contact resistance of 0.05 ± 0.008 Ω-mm on annealed Ge films. The W contacts were thermally stable after annealing up to 650°C.

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