A study on the contact technology of nanomaterial and characterization of the ohmic contact layer in Cds-Al junction

2015 ◽  
Author(s):  
Sambeet Mishra ◽  
C. K. Panigrahi ◽  
Ritesh Dash
Keyword(s):  
Ohmic Contact ◽  
Contact Layer

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome

1996 ◽  
Vol 423 ◽  
Author(s):  
E. D. Luckowski ◽  
J. R. Williams ◽  
M. J. Bozack ◽  
T. Isaacs-Smith ◽  
J. Crofton
Keyword(s):  
Barrier Layer ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Contact Layer ◽  
Weight Percent ◽  
Nickel Silicide ◽  
Electrical Characteristics ◽  
Success Rates ◽  
Diffusion Barrier Layer

AbstractResults are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). In comparison to contacts formed on 6H-SiC using pure Ni, the electrical characteristics of these NiCr contacts are similar (∼ 1E-5 Ω-cm2 for moderately doped material), and composite Au/NiCr contacts exhibit good stability during long-term anneals (∼ 2500 hr) at 300 C without the requirement of a diffusion barrier layer between the ohmic contact layer and the Au cap layer. The use of NiCr also results in success rates near 100% for direct wire bonding to the Au cap layers.

Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy

2002 ◽  
Vol 46 (9) ◽  
pp. 1427-1431 ◽  
Author(s):  
G.H Jessen ◽  
B.D White ◽  
S.T Bradley ◽  
P.E Smith ◽  
L.J Brillson ◽  
...  
Keyword(s):  
Ohmic Contact

Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer

2004 ◽  
Vol 43 (4B) ◽  
pp. 1934-1936 ◽  
Author(s):  
Hsin-Chuan Wang ◽  
Yan-Kuin Su ◽  
Chun-Liang Lin ◽  
Wen-Ben Chen ◽  
Shi-Ming Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ohmic Contact ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Contact Layer ◽  
Multiple Quantum ◽  
Light Emitting

Conductive-AFM for Inline Voltage Contrast Defect Characterization at Advanced Technology Nodes

2018 ◽  
Author(s):  
Chuan Zhang ◽  
Jochonia Nxumalo ◽  
Esther P.Y. Chen
Keyword(s):  
Early Stage ◽  
Contact Layer ◽  
Advanced Technology ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Critical Yield ◽  
Voltage Contrast ◽  
Technology Nodes

Abstract Voltage contrast (VC) mode inline E-beam inspection (EBI) at post contact layer provides electrical readout of critical yield signals at an early stage, which could be months before a wafer reaches functional test. Similar to the passive voltage contrast (PVC) technique that is widely used in failure analysis labs, inline VC scanning is based on scanning electron microscopy, where a low keV electron beam scans across the wafer. Conductive atomic force microscopy (CAFM) was successfully implemented as a characterization method for inline VC defects. In this paper, three challenging VC defect analysis case studies are considered: bright voltage contrast (BVC) gate to active short, BVC Junction leakage, and Dark Voltage Contrast gate contact open. Defects exhibiting a hard electrical short, junctional leakage, and open gate contact are used to illustrate how CAFM provides a powerful and comprehensive solution for in-depth characterization of the inline VC defects.

The Electrical Characterization of Single ZnO Nanowries Field-Effect Transistors

2010 ◽  
Vol 654-656 ◽  
pp. 1178-1181
Author(s):  
Hui Feng Li ◽  
Yun Hua Huang ◽  
Xiu Jun Xing ◽  
Jia Su ◽  
Yue Zhang
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Vacuum ◽  
Electrical Characterization ◽  
Current Transport ◽  
Zno Nanowire ◽  
Metal Materials ◽  
Scanning Electron

The electrical properties of single ZnO nanowire were researched in the chamber of a scanning electron microscope under high-vacuum conditions using nanomanipulator and measurement system. The result shows that ZnO nanowire resistivity was about 1.4 Ω•cm with Ohmic contact. The local change of electron density induced by Shottky contacts or Ohmic contact with tip and semiconductor/metal materials significantly affects the current transport through the nanowire. Single ZnO nanowire was configured as field effect transistors (FET) and based on metal tantalum (Ta) as electrodes show a pronounced n-type gate modulation with an electron concentration of ~1.0×1019 cm−3 and an electron mobility of ~52 cm2 /V s at a bias voltage of 1 V.

Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact

2017 ◽  
Vol 56 (14) ◽  
pp. 4197 ◽  
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Desheng Jiang ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Contact Layer ◽  
Residual Carbon ◽  
Carbon Impurities ◽  
Mg Doped
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