Characteristics of ZnO thin films deposited onto Al/Si substrates by r.f. magnetron sputtering

1997 ◽  
Vol 302 (1-2) ◽  
pp. 116-121 ◽  
Author(s):  
Ki Hyun Yoon ◽  
Ji-Won Choi ◽  
Dong-Heon Lee
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Si Substrates

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

The Properties of the Al-Doped ZnO Thin Film Prepared by Magnetron Sputtering

2013 ◽  
Vol 341-342 ◽  
pp. 237-241
Author(s):  
Wei Hua Huang ◽  
Guo Wen Zhong ◽  
Li Ping Su ◽  
Tan Li
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Doped Zno

Pure and Al-doped ZnO thin films were deposited by radio frequency magnetron sputtering at room temperature on n-(100) Si, fused quartz and Pt/Ti/SiO2/Si substrates. Structural, optical and electrical properties of the prepared thin films had been characterized. The X-ray diffraction results indicated that all the films had (002) preferential orientation. The AFM and SEM images showed that the surface of the films was smooth, crack-free and pore-free, the interface between the film and the substrate was sharp and distinct. From the transmission data the band gap energy Eg of the film increased when doped with Al2O3, and the transparent was still high (above 80%). The current voltage characteristics indicated that doping with Al2O3, the leakage current of ZnO thin films increased rapidly and the films acted as a conductive.

Preparing transparent cobalt-doped ZnO thin films by DC magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6311-6316 ◽  
Author(s):  
Pongladda Panyajirawut ◽  
Nattha Pratumsuwan ◽  
Kornkamon Meesombad ◽  
Kridsana Thanawattana ◽  
Artit Chingsungnoen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno

scholarly journals Growth-Parameter Dependence of Polarity and Electronic Transports in ZnO Thin Films Deposited by Magnetron Sputtering (Phys. Status Solidi A 16∕2018)

2018 ◽  
Vol 215 (16) ◽  
pp. 1870035
Author(s):  
Takeo Ohsawa ◽  
Kei Tsunoda ◽  
Benjamin Dierre ◽  
Sergey Grachev ◽  
Hervé Montigaud ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Growth Parameter ◽  
Parameter Dependence ◽  
Zno Thin Films

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

2010 ◽  
Vol 10 (3) ◽  
pp. S463-S467 ◽  
Author(s):  
Kyu Ung Sim ◽  
Seung Wook Shin ◽  
A.V. Moholkar ◽  
Jae Ho Yun ◽  
Jong Ha Moon ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Sputtering System
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