The Properties of the Al-Doped ZnO Thin Film Prepared by Magnetron Sputtering

2013 ◽  
Vol 341-342 ◽  
pp. 237-241
Author(s):  
Wei Hua Huang ◽  
Guo Wen Zhong ◽  
Li Ping Su ◽  
Tan Li
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Si Substrates ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Doped Zno

Pure and Al-doped ZnO thin films were deposited by radio frequency magnetron sputtering at room temperature on n-(100) Si, fused quartz and Pt/Ti/SiO2/Si substrates. Structural, optical and electrical properties of the prepared thin films had been characterized. The X-ray diffraction results indicated that all the films had (002) preferential orientation. The AFM and SEM images showed that the surface of the films was smooth, crack-free and pore-free, the interface between the film and the substrate was sharp and distinct. From the transmission data the band gap energy Eg of the film increased when doped with Al2O3, and the transparent was still high (above 80%). The current voltage characteristics indicated that doping with Al2O3, the leakage current of ZnO thin films increased rapidly and the films acted as a conductive.

Current–voltage characteristics of high-resistive ZnO thin films deposited by RF magnetron sputtering

Vacuum ◽  
2004 ◽  
Vol 74 (3-4) ◽  
pp. 567-570 ◽  
Author(s):  
H. Kawamura ◽  
H. Yamada ◽  
M. Takeuchi ◽  
Y. Yoshino ◽  
T. Makino ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Current Voltage ◽  
Current Voltage Characteristics

Effect of R.F Power to the Properties of ZnO Thin Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 364 ◽  
pp. 119-123 ◽  
Author(s):  
Nor Diyana Md Sin ◽  
M.Z. Musa ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Absorption Properties ◽  
X Ray ◽  
Atomic Force ◽  
Current Voltage ◽  
Pure Argon Atmosphere

The effect of radio frequency (R.F) power to the properties of zinc oxide (ZnO) thin films deposited by magnetron sputtering is presented. This project has been focused on electrical, optical and structural properties of ZnO thin films. The effect of variation R.F power at 100 watt ~ 400 watt on the ZnO thin films has been investigated. The thin films were examined using current-voltage (I-V) measurement, UV-Vis-NIR spectrophotometer, x-ray diffraction (XRD) and atomic force microscope (AFM). ZnO thin films were prepared at room temperature in pure argon atmosphere by a R.F magnetron sputtering using ZnO target. I-V measurement indicates that at 300 watt R.F power show the highest conductivity. All films have showed high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). Highly oriented ZnO thin films [002] direction was obtained by using Rigaku Ultima IV. The root means square (rms) roughness for ZnO thin film were about (<2nm) was measured using AFM (Park System XE-100). Keywords-ZnO thin films, R.F power, electrical properties, optical properties, structural properties

scholarly journals Structural and optical properties of Fe- doped ZnO thin films prepared by Sol–Gel spin coating process and their photocatalytic activities

2019 ◽  
Vol 17 (40) ◽  
pp. 95-107
Author(s):  
Selma M. H. Al-Jawad
Keyword(s):  
Thin Films ◽  
Organic Dyes ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Pure and Fe-doped zinc oxide nanocrystalline films were preparedvia a sol–gel method using -C for 2 h.The thin films were prepared and characterized by X-ray diffraction(XRD), atomic force microscopy (AFM), field emission scanningelectron microscopy (FE-SEM) and UV- visible spectroscopy. TheXRD results showed that ZnO has hexagonal wurtzite structure andthe Fe ions were well incorporated into the ZnO structure. As the Felevel increased from 2 wt% to 8 wt%, the crystallite size reduced incomparison with the pure ZnO. The transmittance spectra were thenrecorded at wavelengths ranging from 300 nm to 1000 nm. Theoptical band gap energy of spin-coated films also decreased as Fedoping concentration increased. In particular, their optical band gapenergies were 3.75, 3.6, 3.5, 3.45 and 3.3 eV doping concentration of0%, 2%, 4%, 6% and 8% Fe, respectively. The performance of thepure and doped ZnO thin films was examined for the photocatalyticactivity using organic dyes (methyl orange, methyl blue, methylviolet). The samples ZnO with concentration of Fe showed increasedphotocatalytic activity with an optimal maximum performance at0.8 wt%.

Preparing transparent cobalt-doped ZnO thin films by DC magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6311-6316 ◽  
Author(s):  
Pongladda Panyajirawut ◽  
Nattha Pratumsuwan ◽  
Kornkamon Meesombad ◽  
Kridsana Thanawattana ◽  
Artit Chingsungnoen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno

Characteristics of ZnO thin films deposited onto Al/Si substrates by r.f. magnetron sputtering

1997 ◽  
Vol 302 (1-2) ◽  
pp. 116-121 ◽  
Author(s):  
Ki Hyun Yoon ◽  
Ji-Won Choi ◽  
Dong-Heon Lee
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Si Substrates

scholarly journals Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1282 ◽  
Author(s):  
Zhao ◽  
Li ◽  
Ai ◽  
Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Doped Zno ◽  
Switching Characteristics

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

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