Growth behavior and surface morphology of Ag rough thin films deposited on silicone oil surfaces

1999 ◽  
Vol 342 (1-2) ◽  
pp. 30-34 ◽  
Author(s):  
Chun-Mu Feng ◽  
Hong-Liang Ge ◽  
Miao-Rong Tong ◽  
Gao-Xiang Ye ◽  
Zheng-Kuan Jiao
2012 ◽  
Vol 116 (18) ◽  
pp. 9955-9960 ◽  
Author(s):  
C. V. Ramana ◽  
K. Kamala Bharathi ◽  
A. Garcia ◽  
A. L. Campbell

2017 ◽  
Vol 9 (5) ◽  
pp. 05016-1-05016-5 ◽  
Author(s):  
Y. P. Saliy ◽  
◽  
L. I. Nykyruy ◽  
R. S. Yavorskyi ◽  
S. Adamiak ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 724
Author(s):  
Tong Li ◽  
Masaya Ichimura

Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)2 thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)2 were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 105 Ωcm. Thus, the transparent and semiconducting Mg(OH)2 thin films were successfully prepared by DDD.


Author(s):  
S. M. Baraishuk ◽  
T. M. Tkachenko ◽  
A. V. Stanchik ◽  
V. F. Gremenok ◽  
S. A. Bashkirov ◽  
...  

2013 ◽  
Vol 1507 ◽  
Author(s):  
Ryosuke Yamauchi ◽  
Geng Tan ◽  
Daishi Shiojiri ◽  
Nobuo Tsuchimine ◽  
Koji Koyama ◽  
...  

ABSTRACTWe examined the influence of momentary annealing on the nanoscale surface morphology of NiO(111) epitaxial thin films deposited on atomically stepped sapphire (0001) substrates at room temperature in O2 at 1.3 × 10−3 and 1.3 × 10−6 Pa using a pulsed laser deposition (PLD) technique. The NiO films have atomically flat surfaces (RMS roughness: approximately 0.1–0.2 nm) reflecting the step-and-terrace structures of the substrates, regardless of the O2 deposition pressure. After rapid thermal annealing (RTA) of the NiO(111) epitaxial film deposited at 1.3 × 10−3 Pa O2, a periodic straight nanogroove array related to the atomic steps of the substrate was formed on the film surface for 60 s. In contrast, the fabrication of a transient state in the nanogroove array formation was achieved with RTA of less than 1 s. However, when the O2 atmosphere during PLD was 1.3 × 10−6 Pa, random crystal growth was observed and resulted in a disordered rough surface nanostructure after RTA.


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