Growth Behavior, Nucleation Control and Excellent Optical Properties of Atomically Thin WS2 Thin Films Processed via Gas-phase Chemical Vapor Deposition

2021 ◽  
pp. 150908
Author(s):  
Nitin Babu Shinde ◽  
Beo Deul Ryu ◽  
Chang-Hee Hong ◽  
Bellarmine Francis ◽  
S. Chandramohan ◽  
...  
2003 ◽  
Vol 23 (6-8) ◽  
pp. 1013-1016 ◽  
Author(s):  
D. Barreca ◽  
G. Bruno ◽  
A. Gasparotto ◽  
M. Losurdo ◽  
E. Tondello

2013 ◽  
Vol 13 ◽  
pp. S45-S49 ◽  
Author(s):  
Ju-Seop Hong ◽  
Chan-Soo Kim ◽  
Seung-Wan Yoo ◽  
Seong-Han Park ◽  
Sung-Soo Lee ◽  
...  

2015 ◽  
Vol 821-823 ◽  
pp. 990-994
Author(s):  
Mihail Chubarov ◽  
Henrik Pedersen ◽  
H. Högberg ◽  
Magnus Garbrecht ◽  
Zsolt Czigány ◽  
...  

We give here an overview of our recent work on growth of rhombohedral boron nitride (r-BN) thin films on SiC substrates by chemical vapor deposition (CVD). We demonstrate the growth of twinned r-BN on various SiC polytypes at 1500 °C, using H2as carrier gas and triethyl boron and ammonia as precursors with an N/B ratio of ~ 640. The epitaxial relation with various substrates is determined from XRD and TEM. Adding Si to the gas phase stabilizes the r-BN phase but does not alter the electric properties of the material which remains electrically insulating.


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