Study on Influence Laws of Surface Roughness of Micro-Groove in Single Crystal Silicon under Diamond Fly-Cutting

2015 ◽  
Vol 667 ◽  
pp. 142-148 ◽  
Author(s):  
Yan Yan Yan ◽  
Run Xing Wang ◽  
Bo Zhao
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Chip Thickness ◽  
Single Crystal Silicon ◽  
Spindle Speed ◽  
Cutting Depth ◽  
Crystal Silicon ◽  
Groove Surface ◽  
Undeformed Chip Thickness ◽  
Fly Cutting

Single crystal silicon has both important application value in the fields of micro-optics and MEMS, and it has been considered as one of the most difficult-to-cut materials because of its hardness and brittleness. Removal mechanism of the silicon was discussed, and the model of undeformed chip thickness was established in this article. According to the data of micro-groove surface roughness from the diamond fly-cutting experiment, the nonlinear relationship curve, between the largest undeformed chip thicknesshmaxand microgroove surface roughnessRa,were obtained using Gaussian-fitting principle, and the regression equation of the fitting curve was also got. Thus the prediction mathematical model of microgroove surface roughness was derived. The influence laws of the main working parameters on theRawere obtained based on the result of this experiment and the response surface of the prediction model, and some conclusions were summarized: the surface roughnessRaof microgroove in the single crystal silicon decreases with the decrease of the cutting depthap, the feed f and the increase of the spindle speednunder the diamond fly-cutting; the experimental results also showed that feedfaffects the value ofRavery much, cutting depthapless, and spindle speednthe least.

scholarly journals Experimental Research on Discharge Forming Cutting-Electrochemical Machining of Single-Crystal Silicon

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
Bin Xin ◽  
Wei Liu
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Electrical Discharge ◽  
Electrical Discharge Machining ◽  
Electrochemical Machining ◽  
Single Crystal Silicon ◽  
Recast Layer ◽  
Movement Speed ◽  
Crystal Silicon ◽  
Wedm Process

During the wire electrical discharge machining (WEDM) process, a large number of discharge pits and a recast layer are easily generated on the workpiece surface, resulting in high surface roughness. A discharge forming cutting-electrochemical machining method for fabricating single-crystal silicon is proposed in this study to solve this problem. On the same processing equipment, single-crystal silicon is first cut using the discharge forming cutting method. Second, electrochemical anodic reaction technology is used to dissolve the discharge pits and recast layer on the single-crystal silicon surface. The machining mechanism of this process, the surface elements of the processed single-crystal silicon and a comparison of the kerf width are analyzed through experiments. On this basis, the influence of the movement speed of the copper foil electrode during electrochemical anodic dissolution on the final surface roughness is qualitatively analyzed. The experimental results show that discharge forming cutting-electrochemical machining can effectively eliminate the electrical discharge pits and recast layer, which are caused by electric discharge cutting, on the surface of single-crystal silicon, thereby reducing the surface roughness of the workpiece.

Surface roughness of single-crystal silicon etched by TMAH solution

2001 ◽  
Vol 90 (3) ◽  
pp. 223-231 ◽  
Author(s):  
Mitsuhiro Shikida ◽  
Takehiro Masuda ◽  
Daisuke Uchikawa ◽  
Kazuo Sato
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Tmah Solution

Study on Brittle-Ductile Transition Mechanism of Ultra-Precision Turning of Single Crystal Silicon

2008 ◽  
Vol 375-376 ◽  
pp. 11-16 ◽  
Author(s):  
Ming Hai Wang ◽  
Ze Sheng Lu
Keyword(s):  
Single Crystal ◽  
Chip Thickness ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Precision Turning ◽  
Brittle Ductile Transition ◽  
Transition Mechanism ◽  
Effect Theory ◽  
Ultra Precision ◽  
Cutting Model

According to the size effect theory established on the concept of geometrically necessary dislocations and results of nano-indentation experiments, a novel brittle-ductile mechanism of ultra-precision turning of single crystal silicon is proposed. The accurate critical chip thickness is firstly calculated on the basis of theoritical analysis. A macro-micro cutting model is created based on the brittle-ductile transition mechanism. Finally, the results of study are testified through experiments.

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