Characterisation of surface roughness by laser light scattering: specularly scattered intensity measurement

Wear ◽  
1997 ◽  
Vol 209 (1-2) ◽  
pp. 328-337 ◽  
Author(s):  
J.C. Le Bosse ◽  
G. Hansali ◽  
J. Lopez ◽  
T. Mathia
Keyword(s):  
Surface Roughness ◽  
Light Scattering ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Intensity Measurement ◽  
Scattered Intensity

Identifying moa gastroliths using a video light scattering instrument

1994 ◽  
Vol 68 (1) ◽  
pp. 159-163 ◽  
Author(s):  
Roger G. Johnston ◽  
William G. Lee ◽  
W. Kevin Grace
Keyword(s):  
Surface Roughness ◽  
Light Scattering ◽  
Laser Light ◽  
Ocean Waves ◽  
Laser Light Scattering ◽  
Fossil Bone ◽  
High Degree

When not found with fossil bone, gastroliths (fossil gizzard stones) may be hard to identify. One attribute that is potentially useful is their high degree of surface polish, presumably caused by abrasion in the animal's gizzard. A novel video laser light scattering instrument is used to characterize the surface roughness of suspected moa gastroliths, as well as similar (non-gastrolith) quartz rocks that were polished by ocean waves. The instrument is fairly successful at distinguishing between the two types of samples.

Remote Non-Contact Solar Cell Surface Monitoring

2012 ◽  
Author(s):  
Richard Chiou ◽  
Michael Mauk ◽  
Bret Davis
Keyword(s):  
Surface Roughness ◽  
Solar Cell ◽  
Light Scattering ◽  
Cell Surface ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Quality Analysis ◽  
Textured Surfaces ◽  
Cell Manufacturing ◽  
On Line

This paper discusses the design and implementation of a remote non-contact solar cell surface roughness monitoring system as well as resulting data in solar energy manufacturing. The process solution set represents an integrated suite that provides solar cell manufacturing process monitoring, tool and fixture design, visualization, quality analysis, and automation through a remote robotic control system. An experimental study of surface roughness effect on laser light scattering from textured surfaces is described. The results and the system proposed are useful in implementing laser light scattering instruments for on-line monitoring of solar cell manufacturing processes which produce surface roughness patterns.

Laser Light Scattering in-situ Studies on the Growth of Chalcopyrite Thin Films

2001 ◽  
Vol 668 ◽  
Author(s):  
R. Scheer ◽  
Ch. Pietzker ◽  
D. Bräunig
Keyword(s):  
Surface Roughness ◽  
Light Scattering ◽  
Smooth Surface ◽  
Critical Thickness ◽  
Laser Light ◽  
Film Formation ◽  
Secondary Phase ◽  
Laser Light Scattering ◽  
Characteristic Features

ABSTRACTThe method of diffuse laser light scattering (LLS) has been tested for process monitoring of simultaneous and sequential chalcopyrite film formation. Characteristic LLS features are observed which can be assigned to morphological and optoelectronic film modifications. The surface roughness development as a function of time of CuInS2 and CuInSe2 epilayers grown on Si(111) substrates is monitored. It is found that the critical thickness of a smooth surface without islands depends on the film composition (Cu/(Cu+In) ratio). LLS transients for sequential film formation depict a series of characteristic features which are connected with, e.g., precursor transformation, surfacial sulfurization, and secondary phase transformation.

In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef
Keyword(s):  
Growth Rate ◽  
Light Scattering ◽  
Laser Light ◽  
Growth Period ◽  
Laser Light Scattering ◽  
Heterojunction Bipolar Transistor ◽  
Dual Wavelength ◽  
Multi Quantum Well ◽  
Refractive Index Data

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.

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