Full potential linearized-augmented-plane-wave calculations for 5d transition metals using the relativistic generalized gradient approximation

Author(s):  
R.N. Schmid ◽  
E. Engel ◽  
R.M. Dreizler ◽  
P. Blaha ◽  
K. Schwarz
2021 ◽  
pp. 2150039
Author(s):  
EJAZ AHMAD KHERA ◽  
HAFEEZ ULLAH ◽  
MUHAMMAD IMRAN ◽  
HASSAN ALGADI ◽  
FAYYAZ HUSSAIN ◽  
...  

Resistive switching (RS) performances had prodigious attention due to their auspicious potential for data storage. Oxide-based devices with metal insulator metal (MIM) structure are more valuable for RS applications. In this study, we have studied the effect of divalent (nickel) as well as trivalent (aluminum) dopant without and with oxygen vacancy (V[Formula: see text] in hafnia (HfO[Formula: see text]-based resistive random-access memory (RRAM) devices. All calculations are carried out within the full potential linearized augmented plane-wave (FP-LAPW) method based on the WIEN2k code by using generalized gradient approximation (GGA) and generalized gradient approximation with U Hubbard parameters (GGA+U) approach. The studies of the band structure, density of states and charge density reveal that HfNiO2+Vo are more appropriate dopant to enhance the conductivity for RRAM devices.


2007 ◽  
Vol 336-338 ◽  
pp. 2510-2512
Author(s):  
Xiang Yun Deng ◽  
Long Tu Li ◽  
Xiao Hui Wang ◽  
Zhi Lun Gui

The full potential linearized augmented plane wave method within the generalized gradient approximation was used to calculate electronic structure of nanocrystalline BaTiO3 ceramics. We calculated the total and partial density of states of 50 nm BaTiO3 ceramics. The results show that the atoms distribution of nanograin BaTiO3 ceramics is different from those of coarse BaTiO3 ceramics. It is also revealed that the hybridization between Ti 3d and O 2p is very strong, which is very important to the ferroelectric stability of nanocrystalline BaTiO3 ceramics.


2008 ◽  
Vol 22 (20) ◽  
pp. 1893-1902
Author(s):  
L. Y. LI ◽  
G. H. YU ◽  
F. W. ZHU

The segregation of Cu atoms in the Cu/Ni multilayers was investigated by means of the full-potential linearized augmented plane-wave method with the generalized-gradient approximation formula. We investigated the segregation of Cu atoms when the Cu/Ni slab is along the (001) and (111) directions, respectively. The results obtained show that at most one-layer Cu atoms can segregate to the Ni surface when Ni films are deposited on the Cu substrate and the segregation of Cu atoms is not sensitive to the orientation of the Cu/Ni slab surface. The result of Cu segregation is to reduce the vacuum effect.


2014 ◽  
Vol 894 ◽  
pp. 254-258
Author(s):  
Rong Zhen Chen ◽  
Clas Persson

In this work, the electronic structure and dielectric function of chalcopyrite CuInSe2 are presented. The results are based on the full-potential linearized augmented plane wave (FPLAPW) method using the generalized gradient approximation (GGA) plus an onsite Coulomb interaction U of the Cu d states. The dielectric constant, absorption coefficient and refractive index are explored by means of optical response. The spin-orbit coupling effect is considered for the calculations of electronic structure and optical properties. We find that the results based on our calculation method have good agreement compared with experimental and other earlier simulations results.


2017 ◽  
Vol 35 (1) ◽  
pp. 197-210 ◽  
Author(s):  
Shabeer Ahmad Mian ◽  
Muhammad Muzammil ◽  
Gul Rahman ◽  
Ejaz Ahmed

AbstractThe structural, electronic, elastic and optical properties of CsYx I(1 − x)(Y = F, Cl, Br) are investigated using full potential linearized augmented plane wave (FP-LAPW) method within the generalized gradient approximation (GGA). The ground state properties such as lattice constant (ao) and bulk modulus (K) have been calculated. The mechanical properties including Poisson’s ratio (σ), Young’s modulus (E), anisotropy factor (A) and shear modulus (G) were also calculated. The results of these calculations are comparable with the reported experimental and theoretical values. The ductility of CsYx I(1 − x) was analyzed using Pugh’s rule (B/G ratio) and Cauchy’s pressure (C12−C44). Our results revealed that CsF is the most ductile among the CsYxI(1 − x)(Y = F, Cl, Br) compounds. The incremental addition of lighter halogens (Yx) slightly weakens the strength of ionic bond in CsYxI(1 − x). Moreover, the optical transitions were found to be direct for binary and ternary CsYxI(1 − x). We hope that this study will be helpful in designing binary and ternary Cs halides for optoelectronic applications.


2012 ◽  
Vol 585 ◽  
pp. 270-273 ◽  
Author(s):  
Mukhtiyar Singh ◽  
Hardev S. Saini ◽  
Manish K. Kashyap

The full potential linearized augmented plane wave (FPLAPW) method within generalized gradient approximation (GGA) has been used to investigate the effect of disorder between Ni and Mn atoms on the electronic and magnetic properties of NiCoMnGa quaternary Heusler alloy. We observed that the increase in Mn concentration in NiCoMnGa destroys the half metallicity and decreases the total magnetic moment. Further, the disordered alloy exists in ferrimagnetic (FiM) ground state rather than ferromagnetic (FM) one of ordered system due to antiparallel alignment of extra Mn atom with respect to original Mn atom.


SPIN ◽  
2021 ◽  
pp. 2150012
Author(s):  
W. Benosmane ◽  
S. Benatmane ◽  
R. Bentata ◽  
W. Benstaali

The structural electronic and magnetic properties of the double perovskite Ca2CrNbO6 in the cubic structure are investigated using the empirical full-potential linearized augmented plane wave (FP-LAPW) method within the framework of the spin-polarized density functional theory (DFT). These properties are calculated using the Generalized Gradient Approximation (GGA), [Formula: see text] and modified Becke–Johnson mBJ-GGA. In addition, the real and imaginary parts of the optical dielectric function and the reflectivity, and the refractive spectra are computed and the main features shown by their spectra are ascertained on the base of the investigation of density of states.


2015 ◽  
Vol 29 (09) ◽  
pp. 1550057
Author(s):  
A. Hamri ◽  
Z. Dridi ◽  
B. Hamri ◽  
A. Hallouche

The mechanical, electronic and magnetic properties of the full heusler alloys Ru 2 Ti 1-x Fe x Ge for the concentrations x = 0, 0.25, 0.5, 0.75, 1 using WIEN2k implementation of full potential linearized augmented plane wave (FP-LAPW) method in order to find a new compound for the spintronic applications within generalized gradient approximation (GGA) and modified Becke Johnson exchange potential with generalized gradient approximation (MBJ-GGA) as exchange correlation (XC) potential are reported for the first time. Our results show that the Fe incorporating in the Ru 2 TiGe created a half metallic (HM) gap at Fermi level (EF) in minority spin channel (MIC) and induced a magnetic moment on the paramagnetic Ru 2 TiGe . Moreover, the HM gap decreases with increasing the concentrations from 0.25 to 0.75, while the magnetic moment undergoes an inverse behavior.


Sign in / Sign up

Export Citation Format

Share Document