Growth mode and texture development in TiN films during magnetron sputtering – An in situ synchrotron radiation study

AbstractUltrathin TiN films were grown by reactive dc magnetron sputtering on amorphous SiO2 substrates and single-crystalline MgO substrates at 600°C. The resistance of the films was monitored in-situ during growth to determine the coalescence and continuity thicknesses. TiN films grown on SiO2 are polycrystalline and have coalescence and continuity thicknesses of 8 Å and 19 Å, respectively. TiN films grow epitaxially on the MgO substrates and the coalescence thickness is 2 Å and the thickness where the film becomes continuous cannot be resolved from the coalescence thickness. X-ray reflection measurements indicate a significantly higher density and lower roughness of the epitaxial TiN films.

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Asymmetry of interface reactions in Ag-Sn thin film couples—In-situ synchrotron radiation study

Journal of Applied Physics ◽

10.1063/1.5094286 ◽

2019 ◽

Vol 125 (21) ◽

pp. 215302 ◽

Cited By ~ 1

Author(s):

N. Zotov ◽

P. Schützendübe

Keyword(s):

Thin Film ◽

Synchrotron Radiation ◽

Interface Reactions ◽

Radiation Study

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Observation of the growth mode of TiN during magnetron sputtering using synchrotron radiation

Journal of Applied Physics ◽

10.1063/1.1459749 ◽

2002 ◽

Vol 91 (8) ◽

pp. 5429-5433 ◽

Cited By ~ 21

Author(s):

J. Bøttiger ◽

J. Chevallier ◽

J. H. Petersen ◽

N. Schell ◽

W. Matz ◽

...

Keyword(s):

Synchrotron Radiation ◽

Magnetron Sputtering ◽

Growth Mode

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In Situ High-Energy Synchrotron Radiation Study of Boehmite Formation, Growth, and Phase Transformation to Alumina in Sub- and Supercritical Water

Chemistry - A European Journal ◽

10.1002/chem.200901269 ◽

2009 ◽

Vol 15 (48) ◽

pp. 13381-13390 ◽

Cited By ~ 18

Author(s):

Nina Lock ◽

Martin Bremholm ◽

Mogens Christensen ◽

Jonathan Almer ◽

Yu-Sheng Chen ◽

...

Keyword(s):

Phase Transformation ◽

Synchrotron Radiation ◽

Supercritical Water ◽

High Energy ◽

Radiation Study

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A SYNCHROTRON RADIATION STUDY OF THE FORMATION OF CuxSey AND NaxCuySez THIN FILMS ON Cu SUBSTRATES: Cl2-INDUCED OUT-DIFFUSION OF Na

Surface Review and Letters ◽

10.1142/s0218625x00000270 ◽

2000 ◽

Vol 07 (03) ◽

pp. 235-242 ◽

Cited By ~ 5

Author(s):

V. SALTAS ◽

C. A. PAPAGEORGOPOULOS ◽

D. C. PAPAGEORGOPOULOS ◽

D. TONTI ◽

C. PETTENKOFER ◽

...

Keyword(s):

Thin Films ◽

Phase Transition ◽

Synchrotron Radiation ◽

Copper Selenide ◽

Photoemission Spectroscopy ◽

Radiation Study ◽

Cu Substrates ◽

Compound Exposure ◽

Selenide Film

In this paper we study the growth of Cu x Se y and Na x Cu y Se z thin films on polycrystalline Cu substrates. The investigation took place in situ by means of photoemission spectroscopy with synchrotron radiation, in UHV. Deposition of elemental Se with a dense flux on a polycrystalline Cu substrate at RT and subsequent heating to 100°C causes the formation of a thick Cu 2-x Se film (with x equal or very close to zero). A phase transition of this copper selenide occurs by annealing at 200°C. Deposited Na on the Cu 2-x Se film is diffused into the bulk, resulting in the formation of a Na x Cu y Se z compound. Exposure to Cl 2 at 120°C causes the out-diffusion of Na to the surface, where NaCl is formed. The Na diffusion in and out of the copper selenide film is analogous to alkali intercalation–deintercalation from TX 2 layer compounds.

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