Electrical and structural properties of ultrathin polycrystalline and epitaxial TiN films grown by reactive dc magnetron sputtering

MRS Proceedings ◽

10.1557/proc-1156-d03-05 ◽

2009 ◽

Vol 1156 ◽

Author(s):

Fridrik Magnus ◽

Arni Sigurdur Ingason ◽

Sveinn Olafsson ◽

Jon Tomas Gudmundsson

Keyword(s):

Magnetron Sputtering ◽

Structural Properties ◽

Dc Magnetron Sputtering ◽

Single Crystalline ◽

Tin Films ◽

X Ray

AbstractUltrathin TiN films were grown by reactive dc magnetron sputtering on amorphous SiO2 substrates and single-crystalline MgO substrates at 600°C. The resistance of the films was monitored in-situ during growth to determine the coalescence and continuity thicknesses. TiN films grown on SiO2 are polycrystalline and have coalescence and continuity thicknesses of 8 Å and 19 Å, respectively. TiN films grow epitaxially on the MgO substrates and the coalescence thickness is 2 Å and the thickness where the film becomes continuous cannot be resolved from the coalescence thickness. X-ray reflection measurements indicate a significantly higher density and lower roughness of the epitaxial TiN films.

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The Effects of Annealing Temperature on the Structural Properties of ZrB2 Films Deposited via Pulsed DC Magnetron Sputtering

Coatings ◽

10.3390/coatings9040253 ◽

2019 ◽

Vol 9 (4) ◽

pp. 253 ◽

Cited By ~ 2

Author(s):

Wei-Chun Chen ◽

Chao-Te Lee ◽

James Su ◽

Hung-Pin Chen

Keyword(s):

Electron Microscopy ◽

Magnetron Sputtering ◽

Structural Properties ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

High Vacuum ◽

Film Structure ◽

Dc Magnetron Sputtering ◽

Cross Sectional ◽

X Ray

Zirconium diboride (ZrB2) thin films were deposited on a Si(100) substrate using pulsed direct current (dc) magnetron sputtering and then annealed in high vacuum. In addition, we discussed the effects of the vacuum annealing temperature in the range of 750 to 870 °C with flowing N2 on the physical properties of ZrB2 films. The structural properties of ZrB2 films were investigated with X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns indicated that the ZrB2 films annealed at various temperatures exhibited a highly preferred orientation along the [0001] direction and that the residual stress could be relaxed by increasing the annealing temperature at 870 °C in a vacuum. The surface morphology was smooth, and the surface roughness slightly decreased with increasing annealing temperature. Cross-sectional TEM images of the ZrB2/Si(100) film annealed at 870 °C reveals the films were highly oriented in the direction of the c-axis of the Si substrate and the film structure was nearly stoichiometric in composition. The XPS results show the film surfaces slightly contain oxygen, which corresponds to the binding energy of Zr–O. Therefore, the obtained ZrB2 film seems to be quite suitable as a buffer layer for III-nitride growth.

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In-situ electrical characterization of ultrathin TiN films grown by reactive dc magnetron sputtering on SiO2

Thin Solid Films ◽

10.1016/j.tsf.2009.05.028 ◽

2009 ◽

Vol 517 (24) ◽

pp. 6731-6736 ◽

Cited By ~ 39

Author(s):

A.S. Ingason ◽

F. Magnus ◽

J.S. Agustsson ◽

S. Olafsson ◽

J.T. Gudmundsson

Keyword(s):

Magnetron Sputtering ◽

Electrical Characterization ◽

Dc Magnetron Sputtering ◽

Tin Films

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In-situ x-ray studies of compositional control during synthesis of LaGaO3 by radio frequency-magnetron sputtering

Applied Physics Letters ◽

10.1063/1.4929753 ◽

2015 ◽

Vol 107 (8) ◽

pp. 081606 ◽

Cited By ~ 3

Author(s):

Matthew J. Highland ◽

Dillon D. Fong ◽

Guangxu Ju ◽

Carol Thompson ◽

Peter M. Baldo ◽

...

Keyword(s):

Magnetron Sputtering ◽

Radio Frequency ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

X Ray ◽

Compositional Control

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Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.239-242.2752 ◽

2011 ◽

Vol 239-242 ◽

pp. 2752-2755

Author(s):

Fan Ye ◽

Xing Min Cai ◽

Fu Ping Dai ◽

Dong Ping Zhang ◽

Ping Fan ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Optical Band Gap ◽

Diffraction Peak ◽

X Ray Diffraction ◽

Dc Magnetron Sputtering ◽

Flow Rates ◽

X Ray ◽

Equal Distance ◽

Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

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In Situ Epitaxial Growth of the Gd-Ba-Cu-O Superconducting Thin Films on (100) LaAlO3 by Dc-Magnetron Sputtering Using Single Planar Target

Science and Technology of Thin Film Superconductors 2 ◽

10.1007/978-1-4684-1345-8_14 ◽

1990 ◽

pp. 103-107

Author(s):

H. C. Li ◽

H. R. Yi ◽

R. L. Wang ◽

G. N. Zhou ◽

Y. Chen ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Epitaxial Growth ◽

Superconducting Thin Films ◽

Dc Magnetron Sputtering ◽

Planar Target

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Single-Crystalline and Bamboo Al Lines Fabricated by Graphoepitaxy: Microstructure and 1/f Noise Measurements

MRS Proceedings ◽

10.1557/proc-428-127 ◽

1996 ◽

Vol 428 ◽

Author(s):

Marc J.C. Van Den Homberg ◽

A. H. Verbruggen ◽

P. F. A. Alkemade ◽

S. Radelaar

Keyword(s):

Integrated Circuits ◽

Grain Boundaries ◽

Low Noise ◽

Dc Magnetron Sputtering ◽

Rapid Thermal Anneal ◽

Single Crystalline ◽

Noise Measurements ◽

Scaling Down ◽

Sputter Deposited

AbstractThe continuing scaling-down of integrated circuits leads to increased metallization reliability problems, especially electromigration. We used 1/f noise measurements to study the relation between electromigration and microstructure. These measurements are very sensitive to the microstructural attributes, such as grain boundaries and dislocations. Al lines were grown by graphoepitaxy: First, a pure Al film was grown by dc magnetron sputtering on a groove pattern etched into a SiO2 substrate. The growth was then followed by an in situ rapid thermal anneal that resulted in a complete filling of the grooves with Al. These Al lines were carefully characterized with SEM and Backscatter Kikuchi Diffraction. Depending on the presence of a temperature gradient during the anneal, the lines were either nearly single-crystalline or bamboo with one grain per ∼ 3 μm. The resistivity was ∼ 2.8 μΩcm, only slightly higher than for bulk Al. We measured the 1/f noise with the two-channel ac technique at RT. We found in both bamboo as well as the single-crystalline lines a very low noise intensity; a factor two lower than in conventionally sputter deposited and annealed Al lines. No clear difference between the noise spectra of the bamboo and the single-crystalline lines was observed. We concluded that grain boundaries are not the only contributor to 1/f noise; other types of defects must play a role as well.

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Technological Features of the Thick Tin Film Deposition by with Magnetron Sputtering Form Liquid-Phase Target

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.781.8 ◽

2018 ◽

Vol 781 ◽

pp. 8-13 ◽

Cited By ~ 3

Author(s):

Mariya Makarova ◽

Konstantin Moiseev ◽

Alexander Nazarenko ◽

Petr Luchnikov ◽

Galina Dalskaya ◽

...

Keyword(s):

Liquid Phase ◽

Magnetron Sputtering ◽

Deposition Rate ◽

Amorphous Structure ◽

Film Deposition ◽

High Deposition Rate ◽

Crucible Material ◽

Tin Films ◽

X Ray ◽

Tin Film

Technological features of obtaining of tin films in a vacuum by liquid-phase target magnetron sputtering were reviewed. With high deposition rate the white color tin coating with amorphous structure is formed on the substrate. X-ray microanalysis of the obtained tin films showed the presence of micro-and nanoparticles of an impurity of the crucible material in the structure of the films. The use of the tantalum crucible with liquid-phase target magnetron sputtering with deposition rate of 3.2 μm / min allows obtaining ultra-pure, continuous, homogeneous tin film on a stationary substrate without impurity material of the crucible.

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Microstructure and Mechanical Properties of Chromium Carbide Coatings Deposited by Magnetron Sputtering Technique

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.397.118 ◽

2019 ◽

Vol 397 ◽

pp. 118-124

Author(s):

Linda Aissani ◽

Khaoula Rahmouni ◽

Laala Guelani ◽

Mourad Zaabat ◽

Akram Alhussein

Keyword(s):

Thin Films ◽

Mechanical Properties ◽

Magnetron Sputtering ◽

Structural Properties ◽

Annealing Temperature ◽

Diffusion Mechanism ◽

X Ray Diffraction ◽

Chromium Carbides ◽

X Ray ◽

Mechanical And Structural Properties

From the hard and anti-corrosions coatings, we found the chromium carbides, these components were discovered by large studies; like thin films since years ago. They were pointed a good quality for the protection of steel, because of their thermal and mechanical properties for this reason, it was used in many fields for protection. Plus: their hardness and their important function in mechanical coatings. The aim of this work joins a study of the effect of the thermal treatment on mechanical and structural properties of the Cr/steel system. Thin films were deposited by cathodic magnetron sputtering on the steel substrates of 100C6, contain 1% wt of carbon. Samples were annealing in vacuum temperature interval between 700 to 1000 °C since 45 min, it forms the chromium carbides. Then pieces are characterising by X-ray diffraction, X-ray microanalysis and scanning electron microscopy. Mechanical properties are analysing by Vickers test. The X-ray diffraction analyse point the formation of the Cr7C3, Cr23C6 carbides at 900°C; they transformed to ternary carbides in a highest temperature, but the Cr3C2 doesn’t appear. The X-ray microanalysis shows the diffusion mechanism between the chromium film and the steel sample; from the variation of: Cr, Fe, C, O elements concentration with the change of annealing temperature. The variation of annealing temperature shows a clean improvement in mechanical and structural properties, like the adhesion and the micro-hardness.

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