In-situ electrical characterization of ultrathin TiN films grown by reactive dc magnetron sputtering on SiO2

AbstractUltrathin TiN films were grown by reactive dc magnetron sputtering on amorphous SiO2 substrates and single-crystalline MgO substrates at 600°C. The resistance of the films was monitored in-situ during growth to determine the coalescence and continuity thicknesses. TiN films grown on SiO2 are polycrystalline and have coalescence and continuity thicknesses of 8 Å and 19 Å, respectively. TiN films grow epitaxially on the MgO substrates and the coalescence thickness is 2 Å and the thickness where the film becomes continuous cannot be resolved from the coalescence thickness. X-ray reflection measurements indicate a significantly higher density and lower roughness of the epitaxial TiN films.

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ELECTRICAL CHARACTERIZATION OF EPITAXIAL BI:2201

Modern Physics Letters B ◽

10.1142/s0217984902003567 ◽

2002 ◽

Vol 16 (04) ◽

pp. 127-133 ◽

Cited By ~ 1

Author(s):

A. V. POP ◽

G. ILONCA ◽

MARIANA POP ◽

R. DELTOUR

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Magnetron Sputtering ◽

Normal State ◽

Electrical Resistance ◽

Electrical Characterization ◽

Dc Magnetron Sputtering ◽

Normal State Resistivity ◽

Partial Pressures

Bi2.1Sr1.9CuOy thin films (Bi:2201) were deposited onto heated single crystal (100) MgO substrates using inverted cylindrical DC magnetron sputtering with different partial pressures of oxygen in a sputtering gas. The behavior of the normal state resistivity function of temperature is strongly influenced by the composition of sputtering gas used in thin films synthesis. Near the transition to the superconducting state, electrical resistivity changes strongly from "metallic" to insulator (MI). The origin for the increase of electrical resistance was analyzed using some models for the localization of mobile carriers. A good linearity is obtained for ln R as a function of Tα for α = 1/10 and for R as a function of ln T. The last behavior agrees with the pinning and fragmentation of 1D stripes in CuO2 planes.

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Structural and Electrical Characterization of Amorphous and Crystalline Manganese Oxide Thin Films Deposited by DC Magnetron Sputtering

MRS Advances ◽

10.1557/adv.2016.293 ◽

2016 ◽

Vol 1 (60) ◽

pp. 3929-3934 ◽

Cited By ~ 1

Author(s):

David H. Olson ◽

Kenneth D. Shaughnessy ◽

Emma G. Langford ◽

Michael Boyle ◽

Muhammad B. Haider ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Manganese Oxide ◽

Alternative Energy ◽

Fossil Fuels ◽

Fossil Fuel ◽

Electrical Characterization ◽

Cost Effective ◽

Dc Magnetron Sputtering

ABSTRACTThe environmental impact resulting from the use of fossil fuel as an energy source affects the entire globe. Eventually, fossil fuels will no longer be a reasonable source of energy and alternative energy sources will be needed. Thermoelectric materials (TE) that directly convert heat into electricity are a viable option to replace the conventional fossil fuel because they are reliable, cost effective, and use no moving parts. Recently researchers discovered the existence of giant Seebeck coefficient in manganese oxide (MnO2) powders, which ignited an increased interest in MnO2-based materials. In this work we present a systematic structural and electrical characterization of amorphous and crystalline MnxOy thin films. These films were deposited at room temperature on heated silicon and sapphire substrates by DC Magnetron Sputtering. Our preliminary results show that MnxOy/silicon thin films undergo a crystalline change from Mn2O3 to Mn3O4 as annealing temperature is increased from 300°C to 500°C.

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