The role of diffusion in ISOL targets for the production of radioactive ion beams

Author(s):  
G.J. Beyer ◽  
E. Hagebø ◽  
A.F. Novgorodov ◽  
H.L. Ravn
2013 ◽  
Vol T152 ◽  
pp. 014011 ◽  
Author(s):  
Karlheinz Langanke ◽  
Hendrik Schatz

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2864
Author(s):  
Eva Kröll ◽  
Miriana Vadalà ◽  
Juliana Schell ◽  
Simon Stegemann ◽  
Jochen Ballof ◽  
...  

Highly porous yttrium oxide is fabricated as ion beam target material in order to produce radioactive ion beams via the Isotope Separation On Line (ISOL) method. Freeze casting allows the formation of an aligned pore structure in these target materials to improve the isotope release. Aqueous suspensions containing a solid loading of 10, 15, and 20 vol% were solidified with a unidirectional freeze-casting setup. The pore size and pore structure of the yttrium oxide freeze-casts are highly affected by the amount of solid loading. The porosity ranges from 72 to 84% and the crosslinking between the aligned channels increases with increasing solid loading. Thermal aging of the final target materials shows that an operation temperature of 1400 °C for 96 h has no significant effect on the microstructure. Thermo-mechanical calculation results, based on a FLUKA simulation, are compared to measured compressive strength and forecast the mechanical integrity of the target materials during operation. Even though they were developed for the particular purpose of the production of short-lived radioactive isotopes, the yttria freeze-cast scaffolds can serve multiple other purposes, such as catalyst support frameworks or high-temperature fume filters.


1983 ◽  
Vol 23 ◽  
Author(s):  
G.J. Galvin ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
M. Nastasi

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.


2009 ◽  
Author(s):  
Y. Liu ◽  
J. R. Beene ◽  
T. Gottwald ◽  
C. C. Havener ◽  
C. Mattolat ◽  
...  

2005 ◽  
Vol 25 (S1) ◽  
pp. 733-736 ◽  
Author(s):  
R. Lichtenthäler ◽  
A. Lépine-Szily ◽  
V. Guimar aes ◽  
C. Perego ◽  
V. Placco ◽  
...  

2004 ◽  
Vol 746 ◽  
pp. 54-60 ◽  
Author(s):  
A. Stolz ◽  
A. Estrade ◽  
A.D. Davies ◽  
T.N. Ginter ◽  
P.T. Hosmer ◽  
...  

2008 ◽  
Author(s):  
D. Kameda ◽  
H. Ueno ◽  
K. Asahi ◽  
D. Nagae ◽  
A. Yoshimi ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document