Amorphous structures of silicon carbonitride formed by high-dose nitrogen ion implantation into silicon carbide

2003 ◽  
Vol 206 ◽  
pp. 994-998 ◽  
Author(s):  
Manabu Ishimaru ◽  
Muneyuki Naito ◽  
Yoshihiko Hirotsu ◽  
Kurt E. Sickafus
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Silicon Carbonitride ◽  
High Dose ◽  
Nitrogen Ion Implantation ◽  
Amorphous Structures ◽  
Nitrogen Ion

scholarly journals Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

2020 ◽  
Vol 10 (11) ◽  
pp. 4013
Author(s):  
Priya Darshni Kaushik ◽  
Gholam Reza Yazdi ◽  
Garimella Bhaskara Venkata Subba Lakshmi ◽  
Grzegorz Greczynski ◽  
Rositsa Yakimova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Defect Density ◽  
Epitaxial Graphene ◽  
Monolayer Graphene ◽  
Vacancy Defects ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.

Surface cavities produced by high-dose nitrogen ion implantation into silicon

2007 ◽  
Vol 39 (8) ◽  
pp. 698-701 ◽  
Author(s):  
M. Rudolphi ◽  
A. Markwitz ◽  
H. Baumann
Keyword(s):  
Ion Implantation ◽  
High Dose ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

Segregation of Cu impurity in aluminium on silicon during high-dose nitrogen-ion implantation

1992 ◽  
Vol 15 (1-2) ◽  
pp. 137-140 ◽  
Author(s):  
Chenglu Lin ◽  
P.L.F. Hemment ◽  
Jinhua Li ◽  
C.W.M. Chan
Keyword(s):  
Ion Implantation ◽  
High Dose ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion
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