scholarly journals Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

2020 ◽  
Vol 10 (11) ◽  
pp. 4013
Author(s):  
Priya Darshni Kaushik ◽  
Gholam Reza Yazdi ◽  
Garimella Bhaskara Venkata Subba Lakshmi ◽  
Grzegorz Greczynski ◽  
Rositsa Yakimova ◽  
...  

Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.

2014 ◽  
Vol 778-780 ◽  
pp. 1142-1145 ◽  
Author(s):  
Filippo Giannazzo ◽  
Stefan Hertel ◽  
Andreas Albert ◽  
Antonino La Magna ◽  
Fabrizio Roccaforte ◽  
...  

Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.


2009 ◽  
Vol 24 (7) ◽  
pp. 072001 ◽  
Author(s):  
Ming-Wen Ma ◽  
Tsung-Yu Chiang ◽  
Tien-Sheng Chao ◽  
Tan-Fu Lei

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2324
Author(s):  
Mirosław Szala ◽  
Dariusz Chocyk ◽  
Anna Skic ◽  
Mariusz Kamiński ◽  
Wojciech Macek ◽  
...  

From the wide range of engineering materials traditional Stellite 6 (cobalt alloy) exhibits excellent resistance to cavitation erosion (CE). Nonetheless, the influence of ion implantation of cobalt alloys on the CE behaviour has not been completely clarified by the literature. Thus, this work investigates the effect of nitrogen ion implantation (NII) of HIPed Stellite 6 on the improvement of resistance to CE. Finally, the cobalt-rich matrix phase transformations due to both NII and cavitation load were studied. The CE resistance of stellites ion-implanted by 120 keV N+ ions two fluences: 5 × 1016 cm−2 and 1 × 1017 cm−2 were comparatively analysed with the unimplanted stellite and AISI 304 stainless steel. CE tests were conducted according to ASTM G32 with stationary specimen method. Erosion rate curves and mean depth of erosion confirm that the nitrogen-implanted HIPed Stellite 6 two times exceeds the resistance to CE than unimplanted stellite, and has almost ten times higher CE reference than stainless steel. The X-ray diffraction (XRD) confirms that NII of HIPed Stellite 6 favours transformation of the ε(hcp) to γ(fcc) structure. Unimplanted stellite ε-rich matrix is less prone to plastic deformation than γ and consequently, increase of γ phase effectively holds carbides in cobalt matrix and prevents Cr7C3 debonding. This phenomenon elongates three times the CE incubation stage, slows erosion rate and mitigates the material loss. Metastable γ structure formed by ion implantation consumes the cavitation load for work-hardening and γ → ε martensitic transformation. In further CE stages, phases transform as for unimplanted alloy namely, the cavitation-inducted recovery process, removal of strain, dislocations resulting in increase of γ phase. The CE mechanism was investigated using a surface profilometer, atomic force microscopy, SEM-EDS and XRD. HIPed Stellite 6 wear behaviour relies on the plastic deformation of cobalt matrix, starting at Cr7C3/matrix interfaces. Once the Cr7C3 particles lose from the matrix restrain, they debond from matrix and are removed from the material. Carbides detachment creates cavitation pits which initiate cracks propagation through cobalt matrix, that leads to loss of matrix phase and as a result the CE proceeds with a detachment of massive chunk of materials.


2015 ◽  
Vol 33 (6) ◽  
pp. 629-632 ◽  
Author(s):  
Hongchuan YANG ◽  
Shirong ZHANG ◽  
Dunbo YU ◽  
Kuoshe LI ◽  
Quanxia HU ◽  
...  

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