Optical characterization of low-energy nitrogen-ion doped GaAs

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.

Download Full-text

Temperature-Dependent Tribological Improvements in Low-Energy Nitrogen Ion Implanted Vanadium-Titanium Alloys

World Tribology Congress III, Volume 2 ◽

10.1115/wtc2005-64203 ◽

2005 ◽

Author(s):

C. Ballesteros ◽

J. A. Garci´a ◽

M. I. Orti´z ◽

R. Rodri´guez ◽

M. Varela

Keyword(s):

Tribological Properties ◽

Low Energy ◽

Temperature Dependent ◽

Structural Modifications ◽

Nanocomposite Layer ◽

Implantation Temperature ◽

Transmission Electron ◽

Nitrogen Ion ◽

Tribological Characterization

A detailed tribological characterization of low-energy, nitrogen implanted V5 at. %Ti alloy is presented. Samples were nitrogen-implanted at an accelerating voltage of 1.2 kV and 1 mA/cm2, up to a dose of 1E19 ions/cm2. The tribological properties of the alloys: microhardness, friction coefficient and wear resistance, have improved after ion implantation and this improvement increases as the implantation temperature increases. The microstructure of the alloys were analysed by transmission electron microscopy. A direct correlation between structural modifications of the nitrogen implanted layer and the improvement in their tribological properties is obtained. For samples implanted at 848 K a nanocomposite layer where the reinforcement particles are TiN precipitates forms. TiN precipitation appears as the responsible of the improvement in the tribological properties.

Download Full-text

Optical characterization of poly(methyl methacrylate) implanted with low energy ions

Applied Surface Science ◽

10.1016/j.apsusc.2012.09.056 ◽

2012 ◽

Vol 263 ◽

pp. 334-338 ◽

Cited By ~ 22

Author(s):

Renu Gupta ◽

Vijay Kumar ◽

Parveen Kumar Goyal ◽

Shyam Kumar

Keyword(s):

Methyl Methacrylate ◽

Optical Characterization ◽

Low Energy ◽

Poly Methyl Methacrylate ◽

Low Energy Ions

Download Full-text

Optical characterization of low-energy electron-beam-colored LiF crystals by spectral transmittance measurements

Journal of Applied Physics ◽

10.1063/1.371245 ◽

1999 ◽

Vol 86 (7) ◽

pp. 3745-3750 ◽

Cited By ~ 45

Author(s):

M. Montecchi ◽

E. Nichelatti ◽

A. Mancini ◽

R. M. Montereali

Keyword(s):

Electron Beam ◽

Optical Characterization ◽

Low Energy ◽

Energy Electron ◽

Spectral Transmittance ◽

Low Energy Electron

Download Full-text

Study of Low-Energy Ion Assisted Epitaxy of Gan Films: Influence of the Initial Growth Rate

MRS Proceedings ◽

10.1557/proc-585-239 ◽

1999 ◽

Vol 585 ◽

Cited By ~ 4

Author(s):

J. W. Gerlach ◽

D. Schrupp ◽

R. Schwertberger ◽

B. Rauschenbach ◽

A. Anders

Keyword(s):

Growth Rate ◽

Defect Density ◽

Film Structure ◽

Low Energy ◽

Initial Growth ◽

Film Properties ◽

Ion Energy ◽

Atom Ratio ◽

Nitrogen Ion

AbstractThe deposition of thin epitaxial hexagonal gallium nitride films on c-plane sapphire by low-energy nitrogen ion assisted deposition is shown to result in films of high crystalline quality. The quality can be further heightened by using the concept of an isothermal growth rate ramp. Characterization of film structure, defect density distribution and surface topography by XRD, RBS/C, and AFM, respectively, reveals the importance of the nitrogen ion energy and the ion to atom ratio on the film properties.

Download Full-text