Deep level energy states in porous silicon and porous silicon carbide determined by space-charge-limited current measurements

1999 ◽  
Vol 142 (1-4) ◽  
pp. 569-573 ◽  
Author(s):  
Takahiro Matsumoto ◽  
Hidenori Mimura ◽  
Nobuyoshi Koshida ◽  
Yasuaki Masumoto
Keyword(s):  
Silicon Carbide ◽  
Porous Silicon ◽  
Space Charge ◽  
Deep Level ◽  
Level Energy ◽  
Space Charge Limited Current ◽  
Porous Silicon Carbide ◽  
Limited Current ◽  
Energy States ◽  
Space Charge Limited

scholarly journals Study of Radiative Defects Using Current-Voltage Characteristics in ZnO Rods Catalytically Grown on 4H-p-SiC

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
N. Bano ◽  
I. Hussain ◽  
O. Nur ◽  
M. Willander ◽  
P. Klason
Keyword(s):  
Space Charge ◽  
Deep Level ◽  
Current Model ◽  
Current Transport ◽  
Space Charge Limited Current ◽  
Violet Emission ◽  
Limited Current ◽  
Current Voltage ◽  
Zno Rods ◽  
Space Charge Limited

High-quality ZnO rods were grown by the vapour-liquid-solid (VLS) technique on 4H-p-SiC substrate. The current transport mechanisms of the diodes at room temperature (RT) have been explained in term of the space-charge-limited current model based on the energy band diagram of ZnO rods/4H-p-SiC heterostructure. The tunneling mechanism via deep-level states was found to be the main conduction process at low-applied voltage but at trap-filled limit voltage all traps are filled and the space-charge-limited current conduction dominated the current transport. From the RT current voltage measurements, the energy of the deep level trap and the trap concentration were obtained as  eV and , respectively. The deep level states observed correspond to zinc interstitial ( ), responsible for the violet emission.

Space Charge Limited Current in Porous Silicon with traces of Nitrogen Dioxide

2005 ◽  
Vol 872 ◽  
Author(s):  
Stefano Borini ◽  
Andrea M. Rossi ◽  
Luca Boarino ◽  
Giampiero Amato
Keyword(s):  
Porous Silicon ◽  
Nitrogen Dioxide ◽  
Space Charge ◽  
Point Of View ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Nanostructured Systems ◽  
Order Of Magnitude ◽  
Charge Concentration ◽  
Space Charge Limited

AbstractThe discovery of the steep increase of electrical conductivity in Porous Silicon (PS) samples in contact with Nitrogen Dioxide, NO2, opens the possibility to study the electrical conduction processes in nanostructured systems from a completely new point of view. The system undergoes a change of conductivity of 5 orders of magnitude when exposed to few ppm of NO2, whereas the free charge concentration increases by only one order of magnitude in the same pressure range. Upon NO2 exposure the system transition from an “insulator-like” to a “semiconductor-like” behaviour can be studied by means of several techniques. In this paper, the results from a Space Charge Limited Current (SCLC) study unambiguously demonstrate the change of the charging status of defects upon NO2exposure, and explain some “exotic” effects recently reported.

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

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