scholarly journals Photoluminescence at room temperature in amorphous SrTiO3 thin films obtained by chemical solution deposition

2003 ◽  
Vol 77 (2) ◽  
pp. 598-602 ◽  
Author(s):  
F.M Pontes ◽  
E Longo ◽  
E.R Leite ◽  
E.J.H Lee ◽  
J.A Varela ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Chemical Solution ◽  
Solution Deposition

scholarly journals Oriented hexagonal ferrite thin films prepared by chemical solution deposition

2014 ◽  
Vol 70 (a1) ◽  
pp. C725-C725
Author(s):  
Josef Bursik ◽  
Radomir Kuzel ◽  
Karel Knizek ◽  
Ivo Drbohlav
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Sol Gel ◽  
Hexagonal Ferrite ◽  
Material System ◽  
Chemical Solution ◽  
Solution Deposition

Hexagonal ferrites (M, Y, Z-type) represent a new diverse class of magnetoelectric (ME) multiferroics, where ME effect is driven by complex magnetic order. Integration of ME materials with standard semiconductor technology is important for ultimate realization of ME functionalities. They have the potential to display ME coupling under low magnetic field bias and at temperatures close to room temperature. Methods based on sol–gel transition offer possibility of low cost and efficient way for the evaluation of new material system. The single phase, epitaxial thin films of Y-type hexagonal ferrite has been prepared and studied. Thin films of Ba2Zn2Fe12O22(Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO3(111)(ST) single crystal substrates using epitaxial SrFe12O19(M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into high density of well-oriented isolated grains with expressive shape anisotropy and hexagonal habit.The vital parameters of the seed layer, i.e. thickness, substrate coverage,crystallization conditions and temperature ramp were optimized with the aim to obtain epitaxially crystallized Y phase. By overcoating this seed layer, Y phase prepared under optimum deposition and heat treatment conditions presents a (001) orientation perpendicular to the substrate. Perfect parallel in-plane alignment of the hexagonal cells of SrTiO3substrate and both hexaferrite phases was proved by fast ω and φ scan measurements on sets of several diffraction planes at asymmetric orientations, and also by pole figures. The soft magnetic character and existence of pronounced magnetic anisotropy in Y films were confirmed by room temperature measurements of magnetization.

Epitaxial (001) BiFeO3 thin-films with excellent ferroelectric properties by chemical solution deposition-the role of gelation

2015 ◽  
Vol 3 (3) ◽  
pp. 582-595 ◽  
Author(s):  
Qi Zhang ◽  
Nagarajan Valanoor ◽  
Owen Standard
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Critical Role ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

The critical role of gelation is demonstrated in order to achieve epitaxial (001)-BFO thin films with robust room-temperature ferroelectric properties.

Porous Fe3O4 thin films by pulsed laser assisted chemical solution deposition at room temperature

2019 ◽  
Vol 478 ◽  
pp. 408-411 ◽  
Author(s):  
Yanqiu Liu ◽  
Renhuai Wei ◽  
Wei Ding ◽  
Xin Wang ◽  
Wenhai Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Solution ◽  
Solution Deposition

Ferroelectric Properties Improvement of Mn-Doped 0.7BiFeO3-0.3BaTiO3 Thin Films Fabricated by Chemical Solution Deposition

2013 ◽  
Vol 566 ◽  
pp. 159-162
Author(s):  
Yuya Ito ◽  
Makoto Moriya ◽  
Wataru Sakamoto ◽  
Toshinobu Yogo
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Electric Fields ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Homogeneous Surface

Ferroelectric 0.7BiFeO3-0.3BaTiO3 and 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films were prepared by the chemical solution deposition. Perovskite single-phase thin films with homogeneous surface morphology were successfully fabricated at 700°C on Pt/TiOx/SiO2/Si substrates. Although typical polarization (P)-electric field (E) hysteresis loops were observed for 0.7BiFeO3-0.3BaTiO3 thin films, their insulation resistance was relatively low at room temperature. Mn doping for Fe site of the 0.7BiFeO3-0.3BaTiO3 was very effective in improving leakage current properties. In 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films, the abrupt increase in leakage current was suppressed even at high electric fields, leading to the well-shaped P-E hysteresis loops at ambient temperatures. Remanent polarization and coercive field of the 0.7Bi (Fe0.95Mn0.05)O3-0.3Bi0.5Na0.5TiO3 films at room temperature were approximately 26 μC/cm2 and 130 kV/cm, respectively.

Synthesis and Properties of Mn-Doped (Bi0.5Na0.5)TiO3 Thin Films by Chemical Solution Deposition

2013 ◽  
Vol 582 ◽  
pp. 59-62 ◽  
Author(s):  
Narimichi Makino ◽  
Bong Yeon Lee ◽  
Makoto Moriya ◽  
Wataru Sakamoto ◽  
Takashi Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Mn Doped

Lead-free ferroelectric (Bi0.5Na0.5)TiO3(BNT) thin films were prepared by chemical solution deposition. BNT and Mn-doped BNT precursor thin films crystallized in the perovskite single phase at 700 °C on Pt/TiOx/SiO2/Si substrates. The leakage current density of the perovskite BNT films, especially in the high applied field region, was reduced by doping with a small amount of Mn. Also, Mn doping markedly improved the ferroelectric properties of the films. 0.5 and 1.0 mol% Mn-doped BNT thin films exhibited well-shaped ferroelectric polarization (P) electric field (E) hysteresis loops at room temperature. Furthermore, the 1 mol% Mn-doped BNT films showed a typical field-induced strain loop, and the effectived33values were estimated to be about 60 pm/V.

PREPARATION AND CHARACTERISTICS OF Sm-DOPED Bi2Ti2O7 THIN FILMS

2007 ◽  
Vol 14 (01) ◽  
pp. 147-150 ◽  
Author(s):  
DONGMEI YANG ◽  
CHANGHONG YANG ◽  
CHUNXUE YUAN ◽  
XIN YIN ◽  
JIANRU HAN
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dielectric Constant And Loss

Crack-free Sm-doped Bi 2 Ti 2 O 7( Sm : Bi 2 Ti 2 O 7) thin films with a strong (111) orientation have been prepared on p-Si (111) by chemical solution deposition (CSD). The structural properties and crystallizations were studied by X-ray diffraction. The surface morphology and quality were examined using atomic force microscopy (AFM). The dielectric constant and loss factor at different frequencies were also evaluated at room temperature. Their insulation was studied, too. The films exhibit better insulating property than does the pure Bi 2 Ti 2 O 7.

PREPARATION OF (100)- AND (110)-ORIENTED LaNiO3 THIN FILMS BY CHEMICAL SOLUTION DEPOSITION

2007 ◽  
Vol 14 (01) ◽  
pp. 123-128 ◽  
Author(s):  
PILONG WANG ◽  
WEIBING WU ◽  
GUANGDA HU ◽  
SUHUA FAN ◽  
YANXIA DING ◽  
...  
Keyword(s):  
Thin Films ◽  
Acetic Acid ◽  
Chemical Solution Deposition ◽  
Room Temperature ◽  
Processing Conditions ◽  
Deposition Method ◽  
Chemical Solution ◽  
Growth Mechanisms ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

LaNiO 3(LNO) thin films were prepared on Si(100) substrates by a chemical solution deposition method. The orientation of LNO films was controlled by changing the acetic acid amount, concentration of the precursor solutions and pre-annealing time. The highly (100)- and (110)-oriented LNO films were obtained by optimizing these processing conditions. The orientation factors of the optimized (100)- and (110)-oriented LNO films were more than 0.99 and 0.93. Their room-temperature resistivities were 5.1 × 10-4Ωcm and 5.4 × 10-4Ωcm, respectively. The growth mechanisms of the (110)- and (100)-oriented LNO films were discussed.

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