Experimental evidence for a dissociation mechanism in NH3 detection with MIS field-effect devices

2003 ◽  
Vol 89 (1-2) ◽  
pp. 1-8 ◽  
Author(s):  
A.Elisabeth Åbom ◽  
Elisabetta Comini ◽  
Giorgio Sberveglieri ◽  
Nancy Finnegan ◽  
Ivan Petrov ◽  
...  
Keyword(s):  
Experimental Evidence ◽  
Field Effect ◽  
Dissociation Mechanism ◽  
Field Effect Devices

scholarly journals Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Debopriya Dutta ◽  
Subhrajit Mukherjee ◽  
Michael Uzhansky ◽  
Elad Koren
Keyword(s):  
Experimental Evidence ◽  
Surface Potential ◽  
Gate Voltage ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
Electrical Field ◽  
Surface Potential Measurements ◽  
Out Of Plane ◽  
Field Effect Devices ◽  
Optical Applications

AbstractThe ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In2Se3 makes it a promising material for multimodal memory and optoelectronic applications. Herein, we experimentally demonstrate the cross-field optoelectronic modulation in In2Se3 based field-effect devices. Surface potential measurements of In2Se3 based devices directly reveal the bidirectional dipole locking following high gate voltage pulses. The experimental evidence of hysteretic change in the IP electrical field facilitating a nonvolatile memory switch, was further explored by performing photocurrent measurements. Fabricated photodetectors presented multilevel photocurrent characteristics showing promise for nonvolatile memory and electro-optical applications.

scholarly journals High-TcSuperconducting Electronics: Implications of Reduced Dimensionality

1993 ◽  
Vol 15 (3-4) ◽  
pp. 177-186 ◽  
Author(s):  
I. Bozovic ◽  
J. N. Eckstein
Keyword(s):  
Experimental Evidence ◽  
Superconducting State ◽  
Josephson Junctions ◽  
Field Effect ◽  
Unusual Property ◽  
Two Dimensional ◽  
Electronic Components ◽  
Reduced Dimensionality ◽  
Field Effect Devices ◽  
Present Experimental Evidence

First, we present experimental evidence that Bi-Sr-Ca-Cu-O superconductors are effectively quasi-two dimensional, in both the normal and the superconducting state. Next, we analyze how this unusual property of the material influences the quest for active electronic components based on high-Tcsuperconductors, with focus on trilayer Josephson junctions and ferroelectric/superconductor field-effect devices.

scholarly journals Label-free Electrostatic Detection of DNA Amplification by PCR Using Capacitive Field-effect Devices

2016 ◽  
Vol 168 ◽  
pp. 514-517 ◽  
Author(s):  
A. Poghossian ◽  
T.S. Bronder ◽  
S. Scheja ◽  
C. Wu ◽  
T. Weinand ◽  
...  
Keyword(s):  
Field Effect ◽  
Dna Amplification ◽  
Label Free ◽  
Field Effect Devices

Mos digital‐to‐analog converter employing scaled field effect devices

1981 ◽  
Vol 69 (3) ◽  
pp. 889-889
Author(s):  
Ajay K. Puri ◽  
Michael J. Caruso ◽  
Stanley M. Dennison ◽  
Jay Brown
Keyword(s):  
Field Effect ◽  
Digital To Analog Converter ◽  
Analog Converter ◽  
Field Effect Devices ◽  
Digital To Analog

Effect of magnetic quantization on the surface capacitance of MOS field-effect devices

1980 ◽  
Vol 58 (1) ◽  
pp. K51-K54 ◽  
Author(s):  
D. Roy Choudhury ◽  
A. K. Chowdhury ◽  
A. N. Chakravarti ◽  
B. R. Nag
Keyword(s):  
Field Effect ◽  
Magnetic Quantization ◽  
Field Effect Devices

Deterministic assembly of releasable single crystal silicon-metal oxide field-effect devices formed from bulk wafers

2013 ◽  
Vol 102 (18) ◽  
pp. 182104 ◽  
Author(s):  
Tae-il Kim ◽  
Yei Hwan Jung ◽  
Hyun-Joong Chung ◽  
Ki Jun Yu ◽  
Numair Ahmed ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Single Crystal ◽  
Field Effect ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Field Effect Devices
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