Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

AbstractThe ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In2Se3 makes it a promising material for multimodal memory and optoelectronic applications. Herein, we experimentally demonstrate the cross-field optoelectronic modulation in In2Se3 based field-effect devices. Surface potential measurements of In2Se3 based devices directly reveal the bidirectional dipole locking following high gate voltage pulses. The experimental evidence of hysteretic change in the IP electrical field facilitating a nonvolatile memory switch, was further explored by performing photocurrent measurements. Fabricated photodetectors presented multilevel photocurrent characteristics showing promise for nonvolatile memory and electro-optical applications.

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High-TcSuperconducting Electronics: Implications of Reduced Dimensionality

Active and Passive Electronic Components ◽

10.1155/1993/83832 ◽

1993 ◽

Vol 15 (3-4) ◽

pp. 177-186 ◽

Cited By ~ 1

Author(s):

I. Bozovic ◽

J. N. Eckstein

Keyword(s):

Experimental Evidence ◽

Superconducting State ◽

Josephson Junctions ◽

Field Effect ◽

Unusual Property ◽

Two Dimensional ◽

Electronic Components ◽

Reduced Dimensionality ◽

Field Effect Devices ◽

Present Experimental Evidence

First, we present experimental evidence that Bi-Sr-Ca-Cu-O superconductors are effectively quasi-two dimensional, in both the normal and the superconducting state. Next, we analyze how this unusual property of the material influences the quest for active electronic components based on high-Tcsuperconductors, with focus on trilayer Josephson junctions and ferroelectric/superconductor field-effect devices.

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Experimental evidence for a dissociation mechanism in NH3 detection with MIS field-effect devices

Sensors and Actuators B Chemical ◽

10.1016/s0925-4005(02)00400-8 ◽

2003 ◽

Vol 89 (1-2) ◽

pp. 1-8 ◽

Cited By ~ 6

Author(s):

A.Elisabeth Åbom ◽

Elisabetta Comini ◽

Giorgio Sberveglieri ◽

Nancy Finnegan ◽

Ivan Petrov ◽

...

Keyword(s):

Experimental Evidence ◽

Field Effect ◽

Dissociation Mechanism ◽

Field Effect Devices

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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Synthesis and Characterization of Diperfluorooctyl-Substituted Phenylene−Thiophene Oligomers as n-Type Semiconductors. Molecular Structure−Film Microstructure−Mobility Relationships, Organic Field-Effect Transistors, and Transistor Nonvolatile Memory Elements

Chemistry of Materials ◽

10.1021/cm0495008 ◽

2004 ◽

Vol 16 (23) ◽

pp. 4715-4727 ◽

Cited By ~ 103

Author(s):

Antonio Facchetti ◽

Joseph Letizia ◽

Myung-Han Yoon ◽

Melissa Mushrush ◽

Howard E. Katz ◽

...

Keyword(s):

Molecular Structure ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Synthesis And Characterization ◽

Organic Field Effect Transistors ◽

Film Microstructure

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Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.154.95 ◽

2009 ◽

Vol 154 ◽

pp. 95-100 ◽

Cited By ~ 13

Author(s):

Seiichi Miyazaki ◽

Mitsuhisa Ikeda ◽

Katsunori Makihara ◽

K. Shimanoe ◽

R. Matsumoto

Keyword(s):

Surface Potential ◽

Room Temperature ◽

Areal Density ◽

Film Deposition ◽

Floating Gate ◽

Metal Silicide ◽

Kelvin Probe ◽

Measuring Surface ◽

Surface Potential Measurements ◽

Mis Capacitors

We demonstrated a new fabrication method of Pt- and Ni-silicide nanodots with an areal density of the order of ~1011 cm-2 on SiO2 through the process steps of ultrathin metal film deposition on pre-grown Si-QDs and subsequent remote H2 plasma treatments at room temperature. Verification of electrical separation among silicide nanodots was made by measuring surface potential changes due to electron injection and extraction using an AFM/Kelvin probe technique. Photoemission measurements confirm a deeper potential well of silicide nanodots than Si-QDs and a resultant superior charge retention was also verified by surface potential measurements after charging to and discharging. Also, the advantage in many electron storage per silicide nanodot was demonstrated in C-V characteristics of MIS capacitors with silicide nanodots FGs.

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