scholarly journals High-TcSuperconducting Electronics: Implications of Reduced Dimensionality

1993 ◽  
Vol 15 (3-4) ◽  
pp. 177-186 ◽  
Author(s):  
I. Bozovic ◽  
J. N. Eckstein
Keyword(s):  
Experimental Evidence ◽  
Superconducting State ◽  
Josephson Junctions ◽  
Field Effect ◽  
Unusual Property ◽  
Two Dimensional ◽  
Electronic Components ◽  
Reduced Dimensionality ◽  
Field Effect Devices ◽  
Present Experimental Evidence

First, we present experimental evidence that Bi-Sr-Ca-Cu-O superconductors are effectively quasi-two dimensional, in both the normal and the superconducting state. Next, we analyze how this unusual property of the material influences the quest for active electronic components based on high-Tcsuperconductors, with focus on trilayer Josephson junctions and ferroelectric/superconductor field-effect devices.

scholarly journals Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se3

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Debopriya Dutta ◽  
Subhrajit Mukherjee ◽  
Michael Uzhansky ◽  
Elad Koren
Keyword(s):  
Experimental Evidence ◽  
Surface Potential ◽  
Gate Voltage ◽  
Nonvolatile Memory ◽  
Field Effect ◽  
Electrical Field ◽  
Surface Potential Measurements ◽  
Out Of Plane ◽  
Field Effect Devices ◽  
Optical Applications

AbstractThe ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In2Se3 makes it a promising material for multimodal memory and optoelectronic applications. Herein, we experimentally demonstrate the cross-field optoelectronic modulation in In2Se3 based field-effect devices. Surface potential measurements of In2Se3 based devices directly reveal the bidirectional dipole locking following high gate voltage pulses. The experimental evidence of hysteretic change in the IP electrical field facilitating a nonvolatile memory switch, was further explored by performing photocurrent measurements. Fabricated photodetectors presented multilevel photocurrent characteristics showing promise for nonvolatile memory and electro-optical applications.

THz DETECTION BY RESONANT 2-D PLASMONS IN FIELD EFFECT DEVICES

2002 ◽  
Vol 12 (02) ◽  
pp. 491-500 ◽  
Author(s):  
XOMALIN PERALTA ◽  
WOJTEK KNAP
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Thz Radiation ◽  
Double Quantum ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Double Quantum Well ◽  
Field Effect Devices ◽  
Dimensional Electron Gas ◽  
Rich Spectrum

We demonstrate the resonant detection by the two-dimensional electron plasma waves in gated two-dimensional electron gas. Such detection was demonstrated for two devices: for a field effect transistor (FET) THz detector, where the standing 2-D plasmon is tuned to the frequency of the THz radiation by varying the gate bias and for double quantum well field effect transistors with a periodic grating gate, which exhibit a rich spectrum corresponding to standing 2-D plasmons under the metal part of the periodic gate.

Experimental evidence for a dissociation mechanism in NH3 detection with MIS field-effect devices

2003 ◽  
Vol 89 (1-2) ◽  
pp. 1-8 ◽  
Author(s):  
A.Elisabeth Åbom ◽  
Elisabetta Comini ◽  
Giorgio Sberveglieri ◽  
Nancy Finnegan ◽  
Ivan Petrov ◽  
...  
Keyword(s):  
Experimental Evidence ◽  
Field Effect ◽  
Dissociation Mechanism ◽  
Field Effect Devices

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Two-Dimensional-Material-Based Field-Effect Transistor Biosensor for Detecting COVID-19 Virus (SARS-CoV-2)

ACS Nano ◽  
2021 ◽  
Author(s):  
Parvin Fathi-Hafshejani ◽  
Nurul Azam ◽  
Lu Wang ◽  
Marcelo A. Kuroda ◽  
Michael C. Hamilton ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Effect Transistor
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