Preparation of high quality transparent chemical vapor deposition diamond films by a DC arc plasma jet method

2000 ◽  
Vol 9 (9-10) ◽  
pp. 1678-1681 ◽  
Author(s):  
Zhong Guofang ◽  
Shen Fazheng ◽  
Tang Weizhong ◽  
Lu Fanxiu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Chemical Vapor Deposition Diamond ◽  
Arc Plasma ◽  
High Quality ◽  
Dc Arc

Homoepitaxial Diamond Synthesis by DC Arc Plasma Jet Chemical Vapor Deposition

1996 ◽  
Vol 35 (Part 2, No. 5A) ◽  
pp. L577-L580 ◽  
Author(s):  
Akira Higa ◽  
Akimitsu Hatta ◽  
Toshimichi Ito ◽  
Takehiro Maehama ◽  
Minoru Toguchi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Diamond Synthesis ◽  
Arc Plasma ◽  
Dc Arc

Size Dependence of Morphology of Diamond Surfaces Prepared by DC Arc Plasma Jet Chemical Vapor Deposition

1992 ◽  
Vol 31 (Part 1, No. 2A) ◽  
pp. 355-360 ◽  
Author(s):  
Keiji Hirabayashi ◽  
Noriko Iwasaki Kurihara ◽  
Naoto Ohtake ◽  
Masanori Yoshikawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Size Dependence ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Arc Plasma ◽  
Diamond Surfaces ◽  
Dc Arc

Laser flatting chemical vapor deposition diamond films by axial offset-focus

2013 ◽  
Vol 25 (8) ◽  
pp. 1916-1920
Author(s):  
严垒 Yan Lei ◽  
马志斌 Ma Zhibin ◽  
张璋 Zhang Zhang ◽  
邓煜恒 Deng Yuheng ◽  
王兴立 Wang Xingli
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond

A study on the residual stress measurement methods on chemical vapor deposition diamond films

1998 ◽  
Vol 13 (11) ◽  
pp. 3027-3033 ◽  
Author(s):  
Jung Geun Kim ◽  
Jin Yu
Keyword(s):  
Residual Stress ◽  
Chemical Vapor Deposition ◽  
Tensile Stress ◽  
Residual Stresses ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Peak Shift ◽  
Intrinsic Stress ◽  
Chemical Vapor Deposition Diamond

Diamond films were deposited on the p-type Si substrate with the hot filament chemical vapor deposition (HFCVD). Residual stresses in the films were measured in air by the laser curvature, the x-ray diffraction (XRD) dϕψ − sin2ψ, and the Raman peak shift methods. All of the measuring methods showed similar behaviors of residual stress that changed from a compressive to a tensile stress with increasing the film thickness. However, values of residual stresses obtained through the Raman and XRD methods were 3–4 times higher than those of the curvature method. These discrepancies involved the setting of materials constants of CVD diamond film, and determination of a peak shifting on the XRD and Raman method. In order to elucidate the disparity, we measured a Young's moduli of diamond films by using the sonic resonance method. In doing so, the Raman and XRD peak shift were calibrated by bending diamond/Si beams with diamond films by a known amount, with stress levels known a priori from the beam theory, and by monitoring the peak shifts simultaneously. Results of each measuring method showed well coincidental behaviors of residual stresses which have the stress range from −0.5 GPa to +0.7 GPa, and an intrinsic stress was caused about +0.7 GPa with tensile stress.

Diamond growth by hollow cathode arc plasma chemical vapor deposition

1998 ◽  
Vol 13 (11) ◽  
pp. 3114-3121 ◽  
Author(s):  
Gou-Tsau Liang ◽  
Franklin Chau-Nan Hong
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Hollow Cathode ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Arc Plasma ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Cathode Arc

Hollow cathode arc plasma chemical vapor deposition was employed to grow crystalline diamond films using 1.5% to 7% of methane in hydrogen. The growth rate was as high as 3.2 μ/h when using 5% CH4/H2 at a pressure of 15 Torr and a substrate temperature of 1083 K. However, an intermediate layer of several hundred nanometers was observed at the film-substrate interface by cross-section SEM. Raman and XPS characterizations showed that the interfacial layer consisted of sp2 carbon and TaC with Ta vaporized from the hot cathode tube. XRD and XPS results further showed that the deposited diamond films also contained TaC. Ta composition in the film increased with the increase of growth pressure, the reduction of substrate temperature, and the increase of H2 flow in the Ta tube. The diamond films deposited by using CHCl3 as carbon source had Ta concentrations one order of magnitude higher than those using CH4, as shown by XPS results, but the nucleation densities using CHCl3 were always higher than those using CH4.

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