WITHDRAWN: Synthesis of SiC nanopowders by DC arc plasma jet chemical vapor deposition: Effects of methane gas and arc current

2009 ◽  
Author(s):  
Myung Chan Kim ◽  
Jae Hui Rhee ◽  
In-Keun Yu ◽  
Seungyon Cho
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Arc Plasma ◽  
Methane Gas ◽  
Arc Current ◽  
Dc Arc

Homoepitaxial Diamond Synthesis by DC Arc Plasma Jet Chemical Vapor Deposition

1996 ◽  
Vol 35 (Part 2, No. 5A) ◽  
pp. L577-L580 ◽  
Author(s):  
Akira Higa ◽  
Akimitsu Hatta ◽  
Toshimichi Ito ◽  
Takehiro Maehama ◽  
Minoru Toguchi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Diamond Synthesis ◽  
Arc Plasma ◽  
Dc Arc

Size Dependence of Morphology of Diamond Surfaces Prepared by DC Arc Plasma Jet Chemical Vapor Deposition

1992 ◽  
Vol 31 (Part 1, No. 2A) ◽  
pp. 355-360 ◽  
Author(s):  
Keiji Hirabayashi ◽  
Noriko Iwasaki Kurihara ◽  
Naoto Ohtake ◽  
Masanori Yoshikawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Size Dependence ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Arc Plasma ◽  
Diamond Surfaces ◽  
Dc Arc

Fast growth of amorphous Si nanowires by direct current arc plasma jet chemical vapor deposition

2017 ◽  
Vol 10 (03) ◽  
pp. 1750021 ◽  
Author(s):  
Yongheng Wu ◽  
Mingji Li ◽  
Cuiping Li ◽  
Xiaoguo Wu ◽  
Baohe Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Direct Current ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Jet ◽  
Growth Time ◽  
Arc Plasma ◽  
Si Nanowires ◽  
Si Substrate ◽  
Temperature And Growth

Silicon (Si) nanowires were synthesized by direct current arc plasma jet chemical vapor deposition. It was found that growth temperature and growth time played important roles in the morphologies of the Si nanowires. The possible formation mechanism of Si nanowire was also proposed according to the corresponding results. In addition, the Ni particles are dispersed on the Si substrate with the help of alkaline etching, which enables the lateral growth of Si nanowires on a Si substrate. This offers a simple and practical way of synthesizing and positioning the Si nanowires on a substrate.

Diamond growth by hollow cathode arc plasma chemical vapor deposition

1998 ◽  
Vol 13 (11) ◽  
pp. 3114-3121 ◽  
Author(s):  
Gou-Tsau Liang ◽  
Franklin Chau-Nan Hong
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Hollow Cathode ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Arc Plasma ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Cathode Arc

Hollow cathode arc plasma chemical vapor deposition was employed to grow crystalline diamond films using 1.5% to 7% of methane in hydrogen. The growth rate was as high as 3.2 μ/h when using 5% CH4/H2 at a pressure of 15 Torr and a substrate temperature of 1083 K. However, an intermediate layer of several hundred nanometers was observed at the film-substrate interface by cross-section SEM. Raman and XPS characterizations showed that the interfacial layer consisted of sp2 carbon and TaC with Ta vaporized from the hot cathode tube. XRD and XPS results further showed that the deposited diamond films also contained TaC. Ta composition in the film increased with the increase of growth pressure, the reduction of substrate temperature, and the increase of H2 flow in the Ta tube. The diamond films deposited by using CHCl3 as carbon source had Ta concentrations one order of magnitude higher than those using CH4, as shown by XPS results, but the nucleation densities using CHCl3 were always higher than those using CH4.

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