Comparative measurements of acceptor concentration at the growth and nucleation side of microwave plasma CVD polycrystalline diamond films

ABSTRACTThe technology to fabricate polycrystalline diamond film resistors has been initiated using modified thick film patterning techniques and in situ solid source doping.Doping of polycrystalline diamond films in microwave plasma CVD systems has been achieved historically through use of diborane gas, which may contaminate the deposition system causing all diamond films thereafter to be doped p-type. We have attempted noncontaminating in situ doping utilizing two solid source dopants, and have met with preliminary success.The more effective source (B2O3) produces a fairly even dopant concentration across the substrate, with sheet resistances ranging from 800 ohms per square to 4500 ohms per square. The other source (BN) showed significant doping in a narrow band surrounding the source, but the doping concentration decreased rapidly with distance from the source. Films grown afterwards with no doping were evaluated through resistance measurements; no evidence of doping contamination was observed.

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Deposition of large area uniform diamond films by microwave plasma CVD

Vacuum ◽

10.1016/j.vacuum.2017.10.026 ◽

2018 ◽

Vol 147 ◽

pp. 134-142 ◽

Cited By ~ 9

Author(s):

J. Weng ◽

F. Liu ◽

L.W. Xiong ◽

J.H. Wang ◽

Q. Sun

Keyword(s):

Microwave Plasma ◽

Diamond Films ◽

Plasma Cvd ◽

Large Area ◽

Microwave Plasma Cvd

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High-speed synthesis of heavily boron-doped diamond films by in-liquid microwave plasma CVD

Diamond and Related Materials ◽

10.1016/j.diamond.2018.12.013 ◽

2019 ◽

Vol 92 ◽

pp. 41-46 ◽

Cited By ~ 7

Author(s):

Yohei Harada ◽

Ryota Hishinuma ◽

Nicolae Spătaru ◽

Yusei Sakurai ◽

Kazuya Miyasaka ◽

...

Keyword(s):

High Speed ◽

Microwave Plasma ◽

Diamond Films ◽

Plasma Cvd ◽

Boron Doped Diamond ◽

Boron Doped ◽

Microwave Plasma Cvd

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Residual Stress Analysis of Microwave Plasma CVD Diamond Films

Materials Science Forum - Textures of Materials - ICOTOM 14 ◽

10.4028/0-87849-975-x.1359 ◽

2005 ◽

pp. 1359-1364

Author(s):

Leng Chen ◽

Wei Min Mao ◽

Fan Xiu Lu ◽

Ping Yang

Keyword(s):

Residual Stress ◽

Stress Analysis ◽

Microwave Plasma ◽

Diamond Films ◽

Cvd Diamond ◽

Plasma Cvd ◽

Microwave Plasma Cvd ◽

Residual Stress Analysis

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Thermal Conductivity of Diamond Films Synthesized by Microwave Plasma CVD

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.l808 ◽

1986 ◽

Vol 25 (Part 2, No. 10) ◽

pp. L808-L810 ◽

Cited By ~ 99

Author(s):

Akira Ono ◽

Tetsuya Baba ◽

Hiroyuki Funamoto ◽

Akira Nishikawa

Keyword(s):

Thermal Conductivity ◽

Microwave Plasma ◽

Diamond Films ◽

Plasma Cvd ◽

Microwave Plasma Cvd

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Microwave Plasma CVD of High Quality Heteroepitaxial Diamond Films

phys stat sol (a) ◽

10.1002/pssa.2211540115 ◽

1996 ◽

Vol 154 (1) ◽

pp. 185-195 ◽

Cited By ~ 17

Author(s):

M. G. Jubber ◽

D. K. Milne

Keyword(s):

Microwave Plasma ◽

Diamond Films ◽

Plasma Cvd ◽

High Quality ◽

Microwave Plasma Cvd

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Preparation of nanocrystalline diamond films for optical coating applications using a pulsed microwave plasma CVD method

Carbon ◽

10.1016/0008-6223(90)90308-l ◽

1990 ◽

Vol 28 (6) ◽

pp. 799 ◽

Cited By ~ 5

Author(s):

T.P. Ong ◽

W.A. Chiou ◽

F.R. Chen ◽

R.P.H. Chang

Keyword(s):

Microwave Plasma ◽

Diamond Films ◽

Nanocrystalline Diamond ◽

Optical Coating ◽

Plasma Cvd ◽

Cvd Method ◽

Nanocrystalline Diamond Films ◽

Microwave Plasma Cvd

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Electrical Contacts to Polycrystalline B Doped Diamond Films

MRS Proceedings ◽

10.1557/proc-162-341 ◽

1989 ◽

Vol 162 ◽

Cited By ~ 9

Author(s):

K. Nishimura ◽

K. Das ◽

M. Iwase ◽

J. T. Glass ◽

K. Kobashi

Keyword(s):

Carrier Concentration ◽

Room Temperature ◽

Microwave Plasma ◽

Diamond Films ◽

Electrical Contacts ◽

Plasma Cvd ◽

Microwave Plasma Cvd ◽

Order Of Magnitude

ABSTRACTB doped diamond films were synthesized by microwave plasma CVD and electrical contacts were fabricated by R F sputtering. Rc was obtained for Pt, Ni, TaSi2, and Al asdeposited contacts at room temperature. Pt gave the minimum Rc and Al gave the maximum Rc of the metals investigated on films containing a carrier concentration of 5 × 1018/cm3. The minimum Rc, 8.6 × 10−4 Ω cm 2, was obtained on heavily B doped diamond films with a carrier concentration of 2.7 × 1020/cm3. After nnealing at 400 °C, the Rc of Pt contacts on B doped diamond films with a resistivity of 2×104 Ω1 cm decreased by approximately one order of magnitude.

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