Thermal Conductivity of Diamond Films Synthesized by Microwave Plasma CVD

ABSTRACTB doped diamond films were synthesized by microwave plasma CVD and electrical contacts were fabricated by R F sputtering. Rc was obtained for Pt, Ni, TaSi2, and Al asdeposited contacts at room temperature. Pt gave the minimum Rc and Al gave the maximum Rc of the metals investigated on films containing a carrier concentration of 5 × 1018/cm3. The minimum Rc, 8.6 × 10−4 Ω cm 2, was obtained on heavily B doped diamond films with a carrier concentration of 2.7 × 1020/cm3. After nnealing at 400 °C, the Rc of Pt contacts on B doped diamond films with a resistivity of 2×104 Ω1 cm decreased by approximately one order of magnitude.

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Linear antenna microwave plasma CVD deposition of diamond films over large areas

Vacuum ◽

10.1016/j.vacuum.2011.07.008 ◽

2012 ◽

Vol 86 (6) ◽

pp. 776-779 ◽

Cited By ~ 60

Author(s):

A. Kromka ◽

O. Babchenko ◽

T. Izak ◽

K. Hruska ◽

B. Rezek

Keyword(s):

Microwave Plasma ◽

Diamond Films ◽

Linear Antenna ◽

Plasma Cvd ◽

Microwave Plasma Cvd

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Revisiting the gas flow rate effect on diamond films deposition with a new dome-shaped cavity type microwave plasma CVD reactor

Diamond and Related Materials ◽

10.1016/j.diamond.2016.07.014 ◽

2017 ◽

Vol 73 ◽

pp. 99-104 ◽

Cited By ~ 2

Author(s):

J. Su ◽

Y. Li ◽

Y. Liu ◽

M. Ding ◽

W. Tang

Keyword(s):

Flow Rate ◽

Gas Flow ◽

Microwave Plasma ◽

Diamond Films ◽

Rate Effect ◽

Gas Flow Rate ◽

Plasma Cvd ◽

Microwave Plasma Cvd ◽

Flow Rate Effect

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Morphology of Diamond Films Grown by DC Plasma Jet CVD

MRS Proceedings ◽

10.1557/proc-162-115 ◽

1989 ◽

Vol 162 ◽

Cited By ~ 3

Author(s):

Kazuaki Kurihara ◽

Ken-Ichi Sasaki ◽

Motonobu Kawarada ◽

Nagaaki Koshino

Keyword(s):

Growth Rate ◽

Microwave Plasma ◽

Diamond Films ◽

High Growth ◽

Plasma Jet ◽

High Growth Rate ◽

Plasma Cvd ◽

Dc Plasma ◽

Synthesis Conditions ◽

Microwave Plasma Cvd

ABSTRACTIt is well known that diamond films synthesized from the gas phase have well defined crystal habits which are affected strongly by synthesis conditions. Though there have been many studies of the morphologies of diamond films synthesized by microwave plasma CVD [1,2,3], there have been relatively few reports on the morphologies of these films grown using new high growth rate techniques such as DC plasma jet CVD [4]. Morphology control is very important to keep flat surface, when producing thick diamond films by high growth rate techniques. In this paper we report our investigation of the morphology and growth of diamond films synthesized by DC plasma jet CVD.

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