Morphological features of diamond films depending on substrate temperatures via a low pressure polymer precursor process in a hot filament reactor

1998 ◽  
Vol 7 (7) ◽  
pp. 939-943 ◽  
Author(s):  
Z. Sun ◽  
X. Shi ◽  
X. Wang ◽  
B.K. Tay ◽  
H. Yang ◽  
...  
1997 ◽  
Vol 6 (2-4) ◽  
pp. 230-234 ◽  
Author(s):  
Z. Sun ◽  
X. Shi ◽  
B.K. Tay ◽  
D. Flynn ◽  
X. Wang ◽  
...  

2008 ◽  
Vol 17 (12) ◽  
pp. 2075-2079 ◽  
Author(s):  
Shumin Yang ◽  
Zhoutong He ◽  
Qintao Li ◽  
Dezhang Zhu ◽  
Jinlong Gong

2006 ◽  
Vol 21 (1) ◽  
pp. 242-254 ◽  
Author(s):  
A.C. Rastogi ◽  
S.B. Desu

Fluorocarbon polymer films in the poly(tetrafluoroethylene) (PTFE)-like structure are formed by a low-pressure chemical vapor deposition technique using the hot filament excitation of the gaseous C3F6O precursor. The filament and substrate temperatures were found to influence the structure of the deposited films. Infrared absorption and electron spectroscopy studies reveal that a PTFE-like (CF2)2n linear molecular chain structure evolves by an adsorption driven nucleation and CF2 polymerization process in the films deposited with low (450 °C) filament and high (70 °C) substrate temperatures. The films formed at a low substrate temperature (–165 °C) show a higher concentration of CF and C–CF bond defects and shorter (CF2)2n chains. A high (8–10 at.%) oxygen concentration in the films deposited at 600 °C filament temperature is attributed to the reaction of the (CF2)2n chains with COF and peroxyradicals arising from the dissociation of CF3C(O)F and affects the thermal stability of the films. Such reactions are not involved in the film growth at a low (450 °C) filament temperature. These films have much lower (<2 at.%) bonded oxygen content. The films having an ordered (CF2)2n chain structure formed at 70 °C are characterized by low leakage currents ∼7 × 10−11 A cm−2 at 0.1 MV cm−1 field. In comparison, high leakage currents ∼1 × 10−8 A cm−2 are observed for the films having a higher concentration of C–F and C–CF bonds.


1995 ◽  
Vol 10 (1) ◽  
pp. 149-157 ◽  
Author(s):  
J.S. Kim ◽  
M.A. Cappelli

A study of the temperature and stoichiometry dependence of diamond synthesis in low pressure premixed acetylene-oxygen flames is presented. A specially designed low pressure flat flame operating at 40 Torr is employed to deposit diamond films uniformly over areas of at least 2 cm2. Under optimized conditions of substrate temperatures and flame equivalence ratios, high quality translucent diamond that is well faceted is synthesized exhibiting first-order Raman fullwidths (half maximum) of about 2.5 cm−1. Diamond growth rates under these optimum conditions are approximately 4 μm/h. The film growth rate is found to drop off substantially at high substrate temperatures, with little or no carbon deposited beyond a temperature of 1070 °C. The growth behavior in response to changes in flame equivalence ratio and substrate temperature is discussed in terms of the possible role that oxygen-containing species may have on surface chemistry. The results described here are also used to project a base cost for manufacturing diamond under these process conditions.


2010 ◽  
Vol 431-432 ◽  
pp. 519-522
Author(s):  
Hua Zheng ◽  
Fang Hong Sun

The temperature distribution on interior hole surfaces of drawing dies in HFCVD reaction was analyzed by combining the FEM simulation and related measurements. The analysis showed a parabolic tendency of elevating substrate temperatures and a moderating tendency of corresponding temperature gradients while enlarging hot-filament radius. The optimization of the hot-filament radius for a sized drawing die to achieve a comfortable substrate temperature distribution for depositing superior diamond films was conducted and safely supported by related experiments. SEM was used to observe the morphology of diamond films. The simulation is of practical significance for improving the deposition of diamond films in HFCVD reaction.


1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.


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