Influence of oxygen partial pressure on properties of N-doped ZnO films deposited by magnetron sputtering

2010 ◽  
Vol 20 (12) ◽  
pp. 2326-2330 ◽  
Author(s):  
Jin-zhong WANG ◽  
E. ElANGOVAN ◽  
N. FRANCO ◽  
A. ALVESE ◽  
A. REGO ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Zno Films ◽  
Doped Zno

scholarly journals Influence of oxygen partial pressure on the crystal quality and optical properties of Mg-doped ZnO films

2011 ◽  
Vol 60 (3) ◽  
pp. 036804
Author(s):  
Bao Shan-Yong ◽  
Dong Wu-Jun ◽  
Xu Xing ◽  
Luan Tian-Bao ◽  
Li Jie ◽  
...  
Keyword(s):  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Crystal Quality ◽  
Zno Films ◽  
Doped Zno ◽  
Mg Doped

Influence of oxygen partial pressure on the ferromagnetic properties of polycrystalline Cr-doped ZnO films

2008 ◽  
Vol 84 (2) ◽  
pp. 27005 ◽  
Author(s):  
X. Zhang ◽  
W. H. Wang ◽  
L. Y. Li ◽  
Y. H. Cheng ◽  
X. G. Luo ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Zno Films ◽  
Ferromagnetic Properties ◽  
Doped Zno

TUNABLE MAGNETIC AND ELECTRICAL PROPERTIES OF Co-DOPED ZnO FILMS BY VARYING OXYGEN PARTIAL PRESSURE

2011 ◽  
Vol 18 (03n04) ◽  
pp. 91-95
Author(s):  
L. G. WANG ◽  
H. W. ZHANG ◽  
X. L. TANG ◽  
Y. X. LI ◽  
Z. Y. ZHONG
Keyword(s):  
Electrical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Electrical Transport ◽  
Vacancy Defect ◽  
Zno Films ◽  
Doped Zno ◽  
Effect Of Oxygen ◽  
Co Doped ◽  
Magnetic And Electrical Properties

High quality Co -doped ZnO films with good reproducibility have been prepared under different oxygen partial pressure by radio-frequency magnetron sputtering. These films were characterized using numerous characterization techniques including X-ray diffraction, electrical transport, and magnetization measurements. The effect of oxygen partial pressure on the structural, magnetic, and electrical properties of Co -doped ZnO films has been systematically studied. It was found that the structural, magnetic, and electrical properties of Co -doped ZnO films are dependent on oxygen partial pressure. The saturated magnetization of Co -doped ZnO films rapidly increases with decreasing oxygen partial pressure, whereas the resistivity decreases with decreasing oxygen partial pressure. Our findings indicate that the magnetic and electrical properties of Co -doped ZnO films can be tuned by careful control of oxygen partial pressure. In addition, it was further demonstrated that the oxygen vacancy defect is absolutely necessary to induce ferromagnetic couplings in Co -doped ZnO films.

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