The influence of thermal annealing on residual stresses and mechanical properties of arc-evaporated TiC N1− x=0 0.15 0.45 thin films

2002 ◽  
Vol 50 (20) ◽  
pp. 5103-5114 ◽  
Author(s):  
L. Karlsson ◽  
A. Hörling ◽  
M.P. Johansson ◽  
L. Hultman ◽  
G. Ramanath
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stresses ◽  
Thermal Annealing

Stresses in Thin Films

1989 ◽  
Vol 33 ◽  
pp. 25-32
Author(s):  
Jerome B. Cohen
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Solid State ◽  
Residual Stresses ◽  
Electronic Devices ◽  
Void Formation ◽  
Stress Gradients ◽  
Solid State Devices ◽  
Subsequent Failure

While any subject associated with films evokes immediate thoughts about solid-state devices, there are other much more mature areas where it is important, such as coatings, and yet work on this entire subject is only in its infancy. Residual stresses are not only important because of their well-known effect on corrosion and mechanical properties, they can also lead to other severe problems. For example, it is now believed that stress gradients can lead to void formation and subsequent failure in metallization in electronic devices. Thus, it is not only the level of stress that can be important, but gradients across a surface of a thin stripe, or through the thickness.

Residual Stress Relaxation and Microstructure in ZnO Thin Films

2006 ◽  
Vol 45 ◽  
pp. 1316-1321 ◽  
Author(s):  
Istem Ozen ◽  
Mehmet Ali Gülgün
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Residual Stresses ◽  
Thermal Annealing ◽  
Structural Damage ◽  
Single Crystal Silicon ◽  
Extended Period ◽  
Zno Thin Films ◽  
Zno Films ◽  
Crystal Silicon

Stability under normal environmental conditions over a long period of time is crucial for sustainable thin-film device performance. Pure ZnO films with thicknesses in the 140 - 450 nm range were deposited on amorphous glass microscope slides and (100)-oriented single crystal silicon wafers by radio frequency magnetron sputtering. The depositions were performed at a starting temperature of 200 oC. ZnO films had a columnar microstructure strongly textured along the <0002> direction. XRD peak-shift analysis revealed that the films were under residual, compressive, in-plane stress of -5.46 GPa for the glass substrate and -6.69 GPa for the Si substrate. These residual stresses could be completely relaxed by thermal annealing in air. When left under normal environmental condition over an extended period of time the films failed under buckling leading to extensive cracking of the films. The XRD and SEM results indicated different mechanisms of stress relaxation that were favored in the ZnO thin films depending on the energy provided. Although thermal annealing eliminated residual stresses, serious micro-structural damage upon annealing was observed. Thermal annealing also led to preferential growth of some ZnO crystals in the films. This kind of behavior is believed to be indicative of stress-induced directional diffusion of ZnO. It appears that for the extended stability of the films, the stresses have to be eliminated during deposition.

Supercritical Fluid Treatment to Improve Dielectric and Mechanical Properties of Porous ULK Thin Films

2006 ◽  
Vol 914 ◽  
Author(s):  
Julien Beynet ◽  
Vincent Jousseaume ◽  
Alain Madec ◽  
Bruno Rémiat ◽  
N. Dominique Albérola ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Thermal Annealing ◽  
Supercritical Fluid ◽  
Hybrid Film ◽  
Cross Linking ◽  
Residue Removal ◽  
Deposited Film ◽  
Dielectric And Mechanical Properties

AbstractSpin-on glass organosilicate films are promising Ultra Low-ĸ (ULK) interlevel dielectric candidates in which porosity can be created by incorporating thermally labile porogens. The as-deposited film (called the hybrid film) consists of a methylsilsesquioxane (MSQ) matrix and an organic porogen. The standard porogen removal step consists of a 450°C thermal annealing. However, it leaves polymeric residues suspected to cause an incomplete matrix crosslinking and, consequently, to be detrimental to the porous film's electrical and mechanical properties. In this work, a supercritical fluid (SCF) treatment, performed on a 200 mm tool, was added before the thermal annealing with the intent of improving the dielectric properties. Electrical and mechanical properties were greatly enhanced: the dielectric constant was reduced from 2.5 to 2.1 and the Young's modulus was increased from 2 GPa to 3 GPa. Porogen residue removal and cross-linking improvements were investigated by Fourier Transform Infrared (FTIR) spectroscopy in transmission and multiple internal reflection (MIR) mode.

scholarly journals Influence of the Silver Content on Mechanical Properties of Ti-Cu-Ag Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 435
Author(s):  
Saqib Rashid ◽  
Marco Sebastiani ◽  
Muhammad Mughal ◽  
Rostislav Daniel ◽  
Edoardo Bemporad
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stresses ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Antibacterial Properties ◽  
Image Correlation ◽  
Potential Candidate ◽  
Clear Trend ◽  
Control Film

In this work, the ternary titanium, copper, and silver (Ti-Cu-Ag) system is investigated as a potential candidate for the production of mechanically robust biomedical thin films. The coatings are produced by physical vapor deposition—magnetron sputtering (MS-PVD). The composite thin films are deposited on a silicon (100) substrate. The ratio between Ti and Cu was approximately kept one, with the variation of the Ag content between 10 and 35 at.%, while the power on the targets is changed during each deposition to get the desired Ag content. Thin film characterization is performed by X-ray diffraction (XRD), nanoindentation (modulus and hardness), to quantitatively evaluate the scratch adhesion, and atomic force microscopy to determine the surface topography. The residual stresses are measured by focused ion beam and digital image correlation method (FIB-DIC). The produced Ti-Cu-Ag thin films appear to be smooth, uniformly thick, and exhibit amorphous structure for the Ag contents lower than 25 at.%, with a transition to partially crystalline structure for higher Ag concentrations. The Ti-Cu control film shows higher values of 124.5 GPa and 7.85 GPa for modulus and hardness, respectively. There is a clear trend of continuous decrease in the modulus and hardness with the increase of Ag content, as lowest value of 105.5 GPa and 6 GPa for 35 at.% Ag containing thin films. In particular, a transition from the compressive (−36.5 MPa) to tensile residual stresses between 229 MPa and 288 MPa are observed with an increasing Ag content. The obtained results suggest that the Ag concentration should not exceed 25 at.%, in order to avoid an excessive reduction of the modulus and hardness with maintaining (at the same time) the potential for an increase of the antibacterial properties. In summary, Ti-Cu-Ag thin films shows characteristic mechanical properties that can be used to improve the properties of biomedical implants such as Ti-alloys and stainless steel.

scholarly journals Influence of the Silver Content on Mechanical Properties of Ti-Cu-Ag Thin Films

2021 ◽  
Author(s):  
Saqib Rashid ◽  
Marco Sebastiani ◽  
Muhammad Zeeshan Mughal ◽  
Rostislav Daniel ◽  
Edoardo Bemporad
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stresses ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Antibacterial Properties ◽  
Image Correlation ◽  
Potential Candidate ◽  
Clear Trend ◽  
Control Film

In this work, the ternary titanium, copper and silver (Ti-Cu-Ag) system is investigated as a potential candidate for the production of mechanically robust biomedical thin films. The coatings are produced by physical vapor deposition-magnetron sputtering (MS-PVD). The composite thin films are deposited on a silicon (100) substrate. The ratio between Ti and Cu was approximately kept one, with the variation of the Ag content between 10 and 35 at.%, while the power on the targets is changed during each deposition to get the desired Ag content. Thin film characterization is performed by x-ray diffraction (XRD), nanoindentation (modulus and hardness) and Atomic force microscopy to determine the surface topography. The residual stresses are measured by focused ion beam and digital image correlation method (FIB-DIC). The produced Ti-Cu-Ag thin films appear to be smooth, uniformly thick and exhibit amorphous structure for the Ag contents lower than 25 at.%, with a transition to partially crystalline structure for higher Ag concentrations. The Ti-Cu control film shows higher values of 124.5 GPa and 7.85 GPa for modulus and hardness respectively. There is a clear trend of continuous decrease in the modulus and hardness with the increase of Ag content, as lowest value of 105.5 GPa and 6 GPa for 35 at.% Ag containing thin films. In particular, a transition from the compressive (-36.5 MPa) to tensile residual stresses between 229 MPa and 288 MPa are observed with an increasing Ag content. The obtained results suggest that the Ag concentration should not exceed 25 at.%, in order to avoid an excessive reduction of the modulus and hardness with maintaining (at the same time) the potential for an increase of the antibacterial properties. In summary, Ti-Cu-Ag thin films shows characteristic mechanical properties that can be used to improve the properties of biomedical implants such as Ti-alloys and stainless steel.

Rapid Thermal Annealing for Residual-Stress Relaxation in Undoped or Doped Polysilicon Thin Films

1998 ◽  
Vol 546 ◽  
Author(s):  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
Yitshak Zohar
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Stress Relaxation ◽  
Residual Stresses ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Stress Evolution ◽  
Before And After ◽  
Polysilicon Films ◽  
Compressive Residual Stresses

AbstractThe residual stress in doped and undoped polysilicon films, before and after rapid thermal annealing (RTA), is investigated using both wafer-curvature and micro-rotating structures techniques. Microstructure characterization has been conducted as well to understand the mechanism of the stress evolution. The results show that the compressive residual stresses in undoped polysilicon films can be reduced or eliminated within a few seconds RTA. Surface nitridation and grain growth are identified as the mechanisms responsible for the stress evolution.

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