Microstructure and tensile creep mechanisms of an in situ reinforced silicon nitride

1997 ◽  
Vol 45 (1) ◽  
pp. 407-421 ◽  
Author(s):  
C.-W. Li ◽  
F. Reidinger
Keyword(s):  
Silicon Nitride ◽  
Tensile Creep ◽  
Creep Mechanisms

Damage Resistance of In Situ Reinforced Silicon Nitride

1992 ◽  
Vol 287 ◽  
Author(s):  
Chien-Wei Li ◽  
Charles J. Gasdaska ◽  
Jeffrey Goldacker ◽  
Siu-Ching Lui
Keyword(s):  
Silicon Nitride ◽  
Elevated Temperatures ◽  
Amorphous Film ◽  
Stable Crack Growth ◽  
Tensile Creep ◽  
Fracture Origin ◽  
Temperature Fracture ◽  
Stable Growth ◽  
Catastrophic Fracture

ABSTRACTThe room temperature fracture behavior for in situ reinforced (ISR) silicon nitride is correlated to its microstructure and R-curve behavior. The relation of strength to fracture origin suggests that stable growth of the intrinsic flaw precedes catastrophic fracture. Grainbridging that generates a rising bridging stress behind the crack-tip has been proposed as the cause for stable crack growth, which in turn reduces the strength dependency on initial flaw size. As a result of strong bridging by the acicular β-Si3N4 grains, ISR Si3N4 is characterized for high Weibull modulus. At elevated temperatures, the material's tensile creep rupture behavior follows the Monkman-Grant type plot. A tensile creep rate of -10−9s−1 at 1260°C/250 MPa, 1300°C/180 MPa, and 1350°C/90 MPa has been recorded. This relatively strong creep resistance is related to the sliding-resistance of the acicular grains and the properties of the amorphous film between the grains in ISR Si3N4.

Tensile Creep of Y-Si3N4: II. Cavitation

1991 ◽  
Vol 49 ◽  
pp. 972-973 ◽  
Author(s):  
B. J. Hockey ◽  
S. M. Wiederhorn
Keyword(s):  
Silicon Nitride ◽  
Creep Rupture ◽  
Tensile Creep ◽  
Sintering Aids ◽  
Microstructural Changes

ATEM has been used to characterize three different silicon nitride materials after tensile creep in air at 1200 to 1400° C. In Part I, the microstructures and microstructural changes that occur during testing were described, and consistent with that description the designations and sintering aids for these materials were: W/YAS, a SiC whisker reinforced Si3N4 processed with yttria (6w/o) and alumina (1.5w/o); YAS, Si3N4 processed with yttria (6 w/o) and alumina (1.5w/o); and YS, Si3N4 processed with yttria (4.0 w/o). This paper, Part II, addresses the interfacial cavitation processes that occur in these materials and which are ultimately responsible for creep rupture.

In situ IR observation of photo-chemically deposited silicon nitride thin films

1991 ◽  
Vol 48-49 ◽  
pp. 409-413 ◽  
Author(s):  
T. Wadayama ◽  
T. Hihara ◽  
A. Hatta ◽  
W. Suëtaka
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
In Situ Ir

scholarly journals Synthesis of "in situ" reinforced silicon nitride composites

2004 ◽  
Vol 69 (1) ◽  
pp. 59-67 ◽  
Author(s):  
Aleksandra Vuckovic ◽  
Snezana Boskovic ◽  
Ljiljana Zivkovic
Keyword(s):  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Nitride ◽  
Pressureless Sintering ◽  
Sintering Additives ◽  
Sintering Time

The objective of this work was to investigate the effect of two different sintering additives (CeO2 and Y2O3 + Al2O3), sintering time and amount of ?-Si3N4 seeds on the densification, mechanical properties and microstructure of self-reinforced Si3N4 based composites obtained by pressureless sintering. Preparation of ?-Si3N4 seeds, also obtained by a pressureless sintering procedure, is described. Samples without seeds were prepared for comparison. The results imply that self-reinforced silicon nitride based composites with densities close to the theoretical values and with fracture toughness of 9.3MPa m1/2 can be obtained using a presureless sintering procedure.

Fabrication of Sub-250nm High Aspect Ratio Apertures by Focused Ion Beam Lithography

2006 ◽  
Vol 983 ◽  
Author(s):  
Todd Simpson ◽  
Ian V Mitchell
Keyword(s):  
Silicon Nitride ◽  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gold Films ◽  
Ion Beam Lithography ◽  
Diameter Hole ◽  
Sem Imaging ◽  
Aperture Arrays

AbstractAperture arrays were fabricated in 1.0µm thick gold films supported on 20nm thick silicon nitride membranes. Lithographic milling strategies in gold were evaluated through the use of in-situ sectioning and high resolution SEM imaging with the UWO CrossBeam FIB/SEM. A successful strategy for producing a 250nm diameter hole with sidewalls approaching vertical is summarized.

Fabrication and properties of in situ silicon nitride nanowires reinforced porous silicon nitride (SNNWs/SN) composites

2018 ◽  
Vol 38 (6) ◽  
pp. 2671-2675 ◽  
Author(s):  
Duan Li ◽  
Bin Li ◽  
Xuejin Yang ◽  
Shitao Gao ◽  
Yuanyi Zheng
Keyword(s):  
Silicon Nitride ◽  
Porous Silicon
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