scholarly journals Commission No. 9: Instruments and Techniques (Instruments et Techniques)

1988 ◽  
Vol 20 (2) ◽  
pp. 135-149
Author(s):  
C.M. Humphries ◽  
J. Davis

Given here are reports on the scientific and business meetings held in Baltimore involving Commission 9 only. Reports on the following Joint Commission Meetings co-sponsored by Commission 9 (JCM 3 and JCM 6), and on three additional meetings organised jointly with other Commissions, will be found elsewhere in this Volume or in Highlights of Astronomy (Volume 8):-High Angular Resolution Imaging from the Ground (JCM 3)-Stellar Photometry with Array Detectors (JCM 6)-Problems of IR Extinction and Standardization (with Commission 25)-Future Space Programs (with Commission 44)-Gamma-ray, X-ray, Extreme and Far UV, IR and Radio Astronomy from Space (with Commissions 40 and 44)

1988 ◽  
Vol 20 (1) ◽  
pp. 41-54
Author(s):  
C. M. Humphries ◽  
J. Davis ◽  
J. C. Bhattacharyya ◽  
O. Engvold ◽  
B. P. Fort ◽  
...  

The technology leading to very large aperture telescopes and their optics has progressed well in the period since 1984 and plans for many new large aperture telescopes have been made. Focal plane instrumentation continues to become more sophisticated or more efficient: multi-object capabilities, automatic instrument control and operation, and increasing use of CCDs are examples of areas to which this applies. The proportion of time devoted to observations using two-dimensional photoelectronic detectors has grown substantially at many observatories, particularly with telescopes of moderate aperture; and the use of high quantum efficiency array detectors is now being extended into the infrared spectral region. Important advances have also been made in instrumentation and techniques for ground-based high angular resolution interferometry.


1996 ◽  
Author(s):  
Mohamad Al-Sheikhly ◽  
William L. McLaughlin ◽  
Aristos Christou ◽  
Christos A. Christou

Author(s):  
Y. Y. Wang ◽  
H. Zhang ◽  
V. P. Dravid ◽  
H. Zhang ◽  
L. D. Marks ◽  
...  

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.


Author(s):  
R.D. Leapman

Extended X-ray Absorption Fine Structure (EXAFS) analysis makes use of synchrotron radiaion to measure modulations in the absorption coefficient above core edges and hence to obtain information about local atomic environments. EXAFS arises when ejected core electrons are backscattered by surrounding atoms and interfere with the outgoing waves. Recently, interest has also been shown in using inelastic electron scattering1-4. Some advantages of Extended X-ray-edge Energy Loss Fine Structure (EXELFS) are: a) small probes formed by the analytical electron microscope give spectra from μm to nm sized areas, compared with mm diameter areas for the X-ray technique, b) EXELFS can be combined with other techniques such as electron diffraction or high resolution imaging, and c) EXELFS is sensitive to low Z elements with K edges from ˜200 eV to ˜ 3000 eV (B to Cl).


1987 ◽  
Vol 48 (C9) ◽  
pp. C9-367-C9-370
Author(s):  
C. B. COLLINS ◽  
F. DAVANLOO ◽  
T. S. BOWEN ◽  
J. J. COOGAN
Keyword(s):  

2003 ◽  
Vol 8 (5-6) ◽  
pp. 60-64
Author(s):  
A.I. Arkhangelsky ◽  
◽  
Yu.D. Kotov ◽  
P.Yu. Chistiakov ◽  
◽  
...  

Author(s):  
Wenbing Yun ◽  
Steve Wang ◽  
David Scott ◽  
Kenneth W. Nill ◽  
Waleed S. Haddad

Abstract A high-resolution table-sized x-ray nanotomography (XRMT) tool has been constructed that shows the promise of nondestructively imaging the internal structure of a full IC stack with a spatial resolution better than 100 nm. Such a tool can be used to detect, localize, and characterize buried defects in the IC. By collecting a set of X-ray projections through the full IC (which may include tens of micrometers of silicon substrate and several layers of Cu interconnects) and applying tomographic reconstruction algorithms to these projections, a 3D volumetric reconstruction can be obtained, and analyzed for defects using 3D visualization software. XRMT is a powerful technique that will find use in failure analysis and IC process development, and may facilitate or supplant investigations using SEM, TEM, and FIB tools, which generally require destructive sample preparation and a vacuum environment.


1998 ◽  
Vol 502 (1) ◽  
pp. 428-436 ◽  
Author(s):  
Igor V. Moskalenko ◽  
Werner Collmar ◽  
Volker Schonfelder

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