Voltage Measurement by Electron-Beam Probing

1988 ◽  
Vol 46 ◽  
pp. 196-197
Author(s):  
J.D. Reimer
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Electron Probe ◽  
Mechanical Damage ◽  
Alternative Technique ◽  
Voltage Measurement ◽  
Physical Damage ◽  
Needle Probe ◽  
Fine Tungsten ◽  
Tungsten Needle

Ihe voltage measurement technique, commonly used to probe internal nodes to determine signal delays or voltage levels in integrated circuits (ICs), is undergoing a fundamental change. Until recently, fine tungsten needles have been used almost exclusively to carry out these measurements. Advances in IC processing technology have allowed IC interconnection linewidth of 2 μm or less to become a reality. Ihis has caused the tungsten needle to remain at a disproportionate, unsuitable size (Fig. 1), typically causing substantial mechanical damage to the device surface being probed. In anticipation of this dilemma, an alternative technique has been developed, which uses an electron probe instead of a tungsten needle. Since the electron beam (e-beam) does not make contact, no physical damage occurs. Furthermore, it does not present the detrimental loading effect, as does the needle probe, which causes delays or possible device malfunction. Strategies for e-beam probing have been reviewed extensively.

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

An Alternative to High-Temperature and Acid/Solvent-Based Methods for Removing Integrated Circuits from Ceramic or Other Problem Substrates

2005 ◽  
Author(s):  
Carl M. Nail
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Success Rate ◽  
Mechanical Damage ◽  
Test Equipment ◽  
High Success Rate ◽  
Automated Test Equipment ◽  
Removal Method ◽  
Automated Test ◽  
Conventional Methods

Abstract Dice must often be removed from their packages and reassembled into more suitable packages for them to be tested in automated test equipment (ATE). Removing bare dice from their substrates using conventional methods poses risks for chemical, thermal, and/or mechanical damage. A new removal method is offered using metallography-based and parallel polishing-based techniques to remove the substrate while exposing the die to minimized risk for damage. This method has been tested and found to have a high success rate once the techniques are learned.

Electron Probe X-Ray Analysis of Nanofilms at Off-Normal Incidence of the Electron Beam

2018 ◽  
Vol 54 (14) ◽  
pp. 1417-1420
Author(s):  
S. A. Darznek ◽  
V. B. Mityukhlyaev ◽  
P. A. Todua ◽  
M. N. Filippov
Keyword(s):  
Electron Beam ◽  
Electron Probe ◽  
Normal Incidence ◽  
X Ray

Electron Probe Evaluation of Heterogeneity in the Certification of NIST Standard Reference Materials for Microanalysis

1998 ◽  
Vol 4 (S2) ◽  
pp. 242-243
Author(s):  
R. B. Marinenko ◽  
S. Leigh
Keyword(s):  
Electron Beam ◽  
Reference Material ◽  
Electron Probe ◽  
Statistical Approach ◽  
Standard Reference Materials ◽  
Standard Material ◽  
Certification Process ◽  
The Past ◽  
Physical Form ◽  
General Statistical

The certification process for a microanalysis standard can be quite lengthy. In addition to certifying the reference material for composition, the extent of heterogeneity between specimens and within specimens must be determined. NIST (or formerly, NBS) 260 Special Publications have been used in the past to describe procedures used for individual SRM certifications. Some of these publications describe in detail how the extent of microheterogeneity (or, microhomogeneity) as well as the specimen to specimen heterogeneity can be determined. The intent here is to describe a general statistical approach used at NIST to determine and report the extent of heterogeneity. This approach can be readily used by other laboratories either for certification or for evaluation of standards.When evaluating a material for use as a standard, there are several physical characteristics which must be satisfied. The material must be robust under the electron beam at the voltages and currents to which it will be subjected in its proposed use. When mounted and polished, it should be stable on exposure to the atmosphere. However, if the material will not be mounted and polished in use, it should be in the same physical form as the final certified standard material.

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