In situ TEM of silicon oxidation

1992 ◽  
Vol 50 (1) ◽  
pp. 324-325
Author(s):  
J. Murray Gibson ◽  
F.M. Ross ◽  
R.D. Twesten
Keyword(s):  
Materials Science ◽  
Oxidation Process ◽  
Electronic Device ◽  
Model System ◽  
Device Fabrication ◽  
In Situ Tem ◽  
Important Process ◽  
Silicon Oxidation ◽  
Electronic Device Fabrication

Oxidation is an important process in materials science. Silicon oxidation is particularly relevant for electronic device fabrication, but it also provides a model system. We report here the use of in-situ TEM for the examination of the microstructural details of the oxidation process.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

Scanning tunneling microscope-based nanolithography for electronic device fabrication

1993 ◽  
Author(s):  
Joseph W. Lyding ◽  
Roger T. Brockenbrough ◽  
Patrick J. Fay ◽  
John R. Tucker ◽  
Karl Hess
Keyword(s):  
Scanning Tunneling Microscope ◽  
Electronic Device ◽  
Device Fabrication ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Electronic Device Fabrication

Design of a coumarinyl-picolinoyl hydrazide Schiff base for the fluorescence turn-on–off sequential sensing of Al3+ and nitroaromatics, and electronic device fabrication

2019 ◽  
Vol 43 (37) ◽  
pp. 14979-14990 ◽  
Author(s):  
Rakesh Purkait ◽  
Arka Dey ◽  
Sunanda Dey ◽  
Partha Pratim Ray ◽  
Chittaranjan Sinha
Keyword(s):  
Electrical Conductivity ◽  
Schiff Base ◽  
Organic Molecule ◽  
Electronic Device ◽  
Device Fabrication ◽  
Fluorescence Sensing ◽  
Small Organic Molecule ◽  
Turn On ◽  
Fluorescence Turn On ◽  
Electronic Device Fabrication

Designing a small organic molecule for fluorescence sensing and electrical conductivity is a challenging task.

scholarly journals Aggregation of atomically precise graphene nanoribbons

RSC Advances ◽  
2017 ◽  
Vol 7 (86) ◽  
pp. 54491-54499 ◽  
Author(s):  
Mikhail Shekhirev ◽  
Timothy H. Vo ◽  
Donna A. Kunkel ◽  
Alexey Lipatov ◽  
Axel Enders ◽  
...  
Keyword(s):  
Electronic Device ◽  
Graphene Nanoribbons ◽  
Device Fabrication ◽  
One Dimensional ◽  
Electronic Device Fabrication

Atomically precise chevron graphene nanoribbons can form bulk π–π stacked aggregates as well as few-μm-long one-dimensional structures on surfaces that could be used for electronic device fabrication.

Self-Assembled Cobalt Oxide Nanocrystals with Tetrahedral Shape

1998 ◽  
Vol 4 (S2) ◽  
pp. 736-737
Author(s):  
J.S. Yin ◽  
Z.L. Wang
Keyword(s):  
Cobalt Oxide ◽  
Materials Science ◽  
Surface Active Agent ◽  
Active Agent ◽  
Vertical Direction ◽  
Building Blocks ◽  
Research Field ◽  
In Situ Tem ◽  
Small Magnetic Field

Nanocrystal materials are an emerging research field of chemistry, physics and materials science. The size and shape specificity of nanocrystals suggests them as building blocks for constructing selfassembly passivated nanocrystals superlattices (NCS's) or nanocrystals arrays (NCA) [1-6]. In this paper, NCAs of CoO with controlled tetrahedral shape are reported and their structural stability is examined by in-situ TEM.Cobalt oxide nanocrystals were synthesized by chemical decomposition of Co2(CO)8 in toluene under oxygen atmosphere, as given in detail elsewhere [1].Sodium bis(2-ethylhexyl) sulfosuccinate (Na(AOT)) was added as a surface active agent, forming an ordered monolayer passivation (called the thiolate) over the nanocrystal surface. The particle size was controlled by adjusting the wt.% ratio between the precursor and Na(AOT). The as-prepared solution contained Co, CoO and possibly C03O4 nanoparticles, and pure CoO nanoparticles were separated by applying a small magnetic field, which is generated by a horseshoe permanent magnet in vertical direction.

Ultra-slim flexible glass for roll-to-roll electronic device fabrication

2014 ◽  
Vol 116 (2) ◽  
pp. 403-407 ◽  
Author(s):  
Sean Garner ◽  
Scott Glaesemann ◽  
Xinghua Li
Keyword(s):  
Electronic Device ◽  
Device Fabrication ◽  
Roll To Roll ◽  
Electronic Device Fabrication
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