This paper describes a method that can improve the photoresist profile irregularity in self-aligned double patterning process using the Prolith software environment simulation. The new technique helps not only to find the weak points in the etching process, but also to improve the line width of the resulting elements.
In this paper the advantages of using self-aligned double patterning in conjunction with extreme ultraviolet photolithography were analyzed, and a promising spin-on-carbon material used as the layer for the original pattern of the structure to be formed was identified. In addition, a method to treat and protect the shape of the initial profile of regular structure lines by using a direct current superposition on a capacitively-coupled plasma chamber was presented.
INVESTIGATION OF THE PHOTORESIST PROFILE IN SELF-ALIGNED DOUBLE PATTERNING PROCESS APPLYING MATHEMATICAL MODELING METHOD