THICKNESS-DEPENDENT MICROSTRUCTURES AND ELECTRICAL PROPERTIES OF LiTaO3 THIN FILMS PREPARED BY A Sol-Gel PROCESS

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3404-3411
Author(s):  
M. C. KAO ◽  
H. Z. CHEN ◽  
S. L. YOUNG ◽  
C. C. LIN ◽  
C. C. YU
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Relative Dielectric Constant ◽  
Coating Technology ◽  
Si Substrates ◽  
Sol Gel Process

LiTaO 3 thin films were deposited on Pt / Ti / SiO 2/ Si substrates by means of a sol-gel spin-coating technology and rapid thermal annealing (RTA). The influence of various annealing treatments on the characteristics of the thin films were studied by varying the single-annealed-layer thickness (50 ~ 200 nm ) and heating temperatures (500 ~ 800° C ) of the samples. Experimental results reveal that the single-annealed-layer strongly influences grain size, dielectricity and ferroelectricity of LiTaO 3 thin films. The grain size of LiTaO 3 thin film decreases slightly with increasing thickness of the single-annealed-layer, and highly c-axis orientated LiTaO 3 films can be obtained for a single-annealed-layer of 50 nm. When the thickness of the single-annealed-layer was increased from 50 to 200 nm, the relative dielectric constant of LiTaO 3 thin film decreased from 65 to 35, but the dielectric loss factor (tanδ) was increased. The LiTaO 3 films with the single-annealed-layer of 50 nm showed excellent ferroelectric properties in terms of a remanent polarization ( P r) of 12.3 μ C /cm2 (Ec ∼ 60 kV/cm), and a low current density of 5.2×l0-8 A /cm2 at 20 kV/cm.

Ferroelectric Properties of Sol-Gel Derived Ca1-xSrxBi4Ti4O15 Thin Films

2008 ◽  
Vol 368-372 ◽  
pp. 100-102 ◽  
Author(s):  
Su Hua Fan ◽  
Jing Xu ◽  
Guang Da Hu ◽  
Bo He ◽  
Feng Qing Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fatigue Resistance ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
High Concentration ◽  
Gel Method ◽  
Si Substrates

Ca1-xSrxBi4Ti4O15 thin films were fabricated by sol-gel method on Pt(100)/Ti/SiO2/Si substrates. Influence of Sr content on the microstructure and ferroelectric properties of Ca1-xSrxBi4Ti4O15 thin films were systematically studied. The results indicate that Ca0.4Sr0.6Bi4Ti4O15 thin film has better ferroelectric properties with remanent polarization (2Pr) of 29.1+C/cm2, coercive field (2Ec) of 220 kV/cm. Furthermore, the film has good fatigue resistance. The better ferroelectric properties of Ca0.4Sr0.6Bi4Ti4O15 thin film originate from the relatively high concentration of a-axis oriented grains.

The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel Processing

1994 ◽  
Vol 361 ◽  
Author(s):  
Wan In Lee ◽  
J.K. Lee ◽  
Elsub Chung ◽  
C.W. Chung ◽  
I.K. Yoo ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Current Level ◽  
Pzt Thin Films ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTPZT (Zr/Ti = 53/47), PNZT (4% Nb doped PZT), PSZT (2% Sc doped PZT), and PSNZT (1% Sc and 1% Nb doped PZT) thin films were prepared by a sol-gel process. They were characterized by XRD, SEM and TEM. Both crystallographic orientation and grain size of PZT films can be changed by doping. Pt/PZT/Pt capacitors were fabricated for the measurement of ferroelectric properties. By doping with both Sc and Nb, the fatigue performance of the PZT films was considerably improved and the coercive field was decreased, while the remanent polarization was not changed. In addition, the effect of dopants on the leakage current level of PZT films was studied.

Improvement in Ferroelectric Properties of Sol-Gel Derived SrBi2Ta2O9 thin films with seeding layers

2002 ◽  
Vol 718 ◽  
Author(s):  
Ching-Chich Leu ◽  
Chao-Hsin Chien ◽  
Ming-Jui Yang ◽  
Ming-Che Yang ◽  
Tiao-Yuan Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Strontium Bismuth Tantalate ◽  
Seeding Layer ◽  
Si Substrates ◽  
Nucleation Sites

AbstractThe effects of a seeding layer, which was deposited on Pt/TiO2/SiO2/Si substrates using magnetron sputtering, on the characteristics of sol-gel-deposited strontium-bismuth-tantalate (SBT) thin films are investigated. The seeding layer serves as nucleation sites so homogeneous crystalline SBT films of bismuth-layered structure (BLS) with fine grains are successfully obtained by 750°C rapid thermal annealing in O2 ambient. The remanent polarization (2Pr) improves from 12.1 to 18.8 μC/cm2 with the addition of the seeding layer. In addition, the seeding layer also results in a lower nucleation temperature, allowing the use of 700°C annealing for 10 min to grow SBT films that are fully crystallized with BLS phase and shows good ferroelectric properties. Finally, crystallinity and microstructures of SBT films are found to be strongly dependent on the thickness of the seeding layer. Optimum Ta-seeded SBT thin film crystallized at 700°C for 10min depicts a higher 2Pr value (12.9 μC/cm2 (@5V) than that of the un-seeded films crystallized at 750°C for 1min.

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films

2005 ◽  
Vol 902 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Switching Field ◽  
Mn Doping ◽  
Mn Doped

AbstractMn-doped Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si <100> substrates. The surface morphology and ferroelectric properties of Mn-doped BLT films depend upon the orientation of the films. Small amount of Mn-doping in BLT films influences the ferroelectric properties of the films, that is, it enhances the remanent polarization and reduces the coercive field. The 1% Mn-doped BLT films show enhanced remanent polarization and reduced the coercive field by about 22%. To the contrary, Mn-doping more than 1% decreases polarization gradually. Mn-doping significantly improves the fatigue resistance of BLT films. The reduced polarization in the 3.3% Mn-doped thin film recovers during switching cycles higher than 5 × 105. Under high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization after 5 × 105 in the 3.3% Mn-doped BLT film.

Preparation and Properties of Multiferroic La-Doped BiFeO3 Thin Film

2012 ◽  
Vol 486 ◽  
pp. 417-421 ◽  
Author(s):  
Xiao Yan Zhang ◽  
Xi Wei Qi ◽  
Jian Quan Qi ◽  
Xuan Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Secondary Phases ◽  
Glass Substrates ◽  
Ito Glass ◽  
Sol Gel Process ◽  
La Doped

Multiferroic La-doped Bi1-xLaxFeO3 thin films were prepared on conductive indium tin oxide (ITO)/glass substrates through a simple sol-gel process. The crystal structure of La-doped Bi1-xLaxFeO3 thin films annealed at different temperature was determined to be rhombohedral of R3m space and free of secondary phases. The grain size of La-doped BiFeO3 thin films tends to become larger and the grain boundary is gradually ambiguous compared to pure BiFeO3. The double remanent polarization 2Pr of Bi0.9La0.1FeO3 thin film annealed at 500°C is 6.66 µC/cm2, which is slightly improved than that of pure BiFeO3 thin film. With the increase of La-doping levels, the dielectric constant is increased and the dielectric loss is obviously decreased.

scholarly journals Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer

2021 ◽  
Author(s):  
jie jiang ◽  
Lei Liu ◽  
Kuo Ouyang ◽  
Zhouyu Chen ◽  
Shengtao Mo ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Large Dielectric Constant ◽  
Sol Gel Process ◽  
A New Technique

Abstract With its excellent ferroelectric properties such as large dielectric constant and large remanent polarization, PZT thin films are extensively used in micro-sensors and other devices. In this study, the sol-gel process was used to fabricate Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands. The experimental consequences demonstrate that all the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seeds show pure perovskite phase with no other impurity phases, and the electrical properties of Pb(Zr0.52Ti0.48)O3 thin films modified by Pb(ZrxTi1−x)O3 seed islands with different Zr/Ti ratios are improved, such as remanent polarization increased, dielectric properties increased, coercive electric field decreased, leakage current density decreased, etc. In particular, the electrical properties of the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands are the most optimal when the x is 0.52. This paper provides a new technique for optimizing the electrical properties of PZT thin films, which is of great significance for breaking through the bottleneck of the development of ferroelectric memory.

Bi4Ti3O12 and Bi3.25La0.75Ti3O12 Thin Films Prepared by RF Magnetron Sputtering

2010 ◽  
Vol 434-435 ◽  
pp. 296-299
Author(s):  
Jian Ping Yang ◽  
Xing Ao Li ◽  
An You Zuo ◽  
Zuo Bin Yuan ◽  
Zhu Lin Weng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Growth Behavior ◽  
Ferroelectric Thin Films ◽  
Si Substrates ◽  
Grain Growth Behavior

Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious.

Effects of Rare Earth Gd Doping on Ferroelectric Properties of PbZr0.52Ti0.48O3 Thin Films Prepared by Sol–Gel Methods

2007 ◽  
Vol 336-338 ◽  
pp. 21-23
Author(s):  
Qiu Sun ◽  
Ying Song ◽  
Fu Ping Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Si Substrates ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Pzt Thin Film ◽  
Thermal Annealing Process ◽  
Better Than

The Pb(Zr0.52Ti0.48)O3 thin films with 0-2at.%Gd dopants (denoted as PGZT) were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel technique and a rapid thermal annealing process. The structures of PGZT films were characterized and the ferroelectric properties such as P–V loop, C–V and I–V characteristics were investigated. Improved polarization (2Pr = 46.373 μC/cm2) and the low leakage current (J = 1.5×10-9 A/cm2 at the electric field of 400 kV/cm) were obtained in the PZT thin film with 1at.% Gd dopant, which was better than that of the pure PZT thin film (2Pr = 39.099 μC/cm2, J = 4.3×10-8A/cm2). With the Gd contents up to 2at.%, a decreased remanent polarization was found.

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